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부품번호 | AWT6130 기능 |
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기능 | Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module | ||
제조업체 | ANADIGICS | ||
로고 | |||
전체 8 페이지수
FEATURES
• InGaP HBT Technology
• High Efficiency: 48% AMPS, 37% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
AWT6130
Cellular Dual ModwewwA.DMaPtaSSh/eCeDt4UM.cAom3.5V
29dBm Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
• Tri Mode CDMA Handsets with GPS
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6130 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
06/2003
AWT6130
Table 4: Electrical Specifications - AMPS Operation
(TC = +25 °C, VCC = +3.5 V, VREF = +2.9 V, VMODE = +2.9 V, POUT = +31.5 dBm, 50 Ω system)
PARAMETER
MIN TYP MAX UNIT
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COMMENTS
Gain
25.5 28 30 dB
Gain Variation
-
0.3 1.0
dB
Power-Added Efficiency
44 48
-
%
Quiescent Current (Icq)
- 50 65 mA
Reference Current
- 3 5 mA through VREF pin
Mode Control Current
-
0.3 0.5
mA through VMODE pin
Leakage Current
-
<1 5
µA
VCC = +4.2 V, VREF = 0 V
VMODE = 0 V
Noise in Receive Band
- -135 -133 dBm/Hz 869 MHz to 894 MHz
Harmonics
2fo
3fo, 4fo
-
-
-40
-50
-30
-30
dBc
Input Impedance
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +31.5 dBm
In-band load VSWR < 8:1
- - -70 dBc Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
Load mismatch stress with no
permanent degradation or failure
8:1
-
VCC = +5.0 V, PIN = +5 dBm
- VSWR Applies over full operating
temperature range
4 PRELIMINARY DATA SHEET Rev 1.0
06/2003
4페이지 PACKAGE OUTLINE
AWT6130
www.DataSheet4U.com
Figure 3: M7 Package Outline - 10 Pin 4mm x 4mm Surface Mount Module
PRELIMINARY DATA SHEET Rev 1.0
06/2003
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ AWT6130.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AWT6130 | Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module | ANADIGICS |
AWT6130 | Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |