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Número de pieza | AWT6137 | |
Descripción | HELP Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module | |
Fabricantes | ANADIGICS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AWT6137 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! AWT6137
HELPTM Cellular DuawlwMw.oDdaetaSAhMeePt4SU./cComDMA
3.4V/28dBm Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
• InGaP HBT Technology
• High Efficiency:
39% @ +28 dBm
20% @ +16 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
AWT6137
• VREF = +2.85 V (+2.7 V Min Over Temp.)
• Low Profile Surface Mount Package: 1.56mm Max
• CDMA 1XRTT and 1xEV-DO Compliant
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6137 CDMA/AMPS Power Amplifier is a high
performance CDMA2000/ 1XRTT amplifier designed
specifically for Cellular wireless applications. This
rugged, easy to use InGaP HBT design delivers
state of the art efficiency and temperature stability
with very low DC power consumption. The
AWT6137 PA module has the lowest CDG currents
available to handset manufacturers today.
handset. The device has mode-switching to take
advantage of its high efficiency operation over a wide
range of output powers. Higher low power efficiency
is achieved without an external DAC or DC-DC
converter. The integrated power amplifier module
employs a proprietary bias control and temperature
compensation circuit that assures stable operation,
even at extreme temperature conditions.
A combination of low idle current and mode The self contained 4 x 4 x 1.5 mm surface mount
switching enables the AWT6137 to deliver package incorporates matching networks optimized
unparalleled CDMA average power efficiencies. for output power, efficiency and linearity in a 50 Ω
This bias feature allows the AWT6137 to significantly system making it easy to incorporate the device into
increase the battery usage time of a mobile BOTH new and existing designs.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
03/2004
1 page AWT6137
PARAMETER
Table 5: Electrical Specifications - CDMA Operation
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)
www.DataSheet4U.com
MIN TYP MAX UNIT COMMENTS
Gain
Adjacent Channel Power
at + 885 kHz offset (1)
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at + 1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Power-Added Efficiency (1)
Quiescent Current (Icq)
25
14
-
-
-
-
37
18
1
-
-
27 30
16 20
dB
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
-49 -47
-54 -47
dBc
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
-59 -56
-60 -57
39 -
20 -
1.7 -
100 120
15 20
dBc
%
mA
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = 0 dBm, VMODE = +2.85 V
VMODE = 0 V
VMODE = +2.85 V
Reference Current
Mode Control Current
Leakage Current
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
Spurious Output Level
(all spurious outputs)
-
-
-
-
-
-
-
-
Load mismatch stress with no
permanent degradation or failure
8:1
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
3.5 5.0
mA through VREF pin
0.6
<1
-135
1
5
-133
mA through VMODE pin
µA
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
dBm/Hz 869 MHz to 894 MHz
-40 -30
-45 -30
dBc
- 2:1 VSWR
POUT < +28 dBm
- -65 dBc In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
VCC = +5.0 V
-
-
VSWR
PIN = +5 dBm
Applies over full operating
temperature range
PRELIMINARY DATA SHEET - Rev 1.0
03/2004
5
5 Page NOTES
AWT6137
www.DataSheet4U.com
PRELIMINARY DATA SHEET - Rev 1.0
03/2004
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet AWT6137.PDF ] |
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