PDF AWT6108 Data sheet ( Hoja de datos )

Número de pieza	AWT6108
Descripción	Quad Band Power Amplifier Module
Fabricantes	ANADIGICS
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No Preview Available ! FEATURES InGaP HBT Technology Integrated Power Control (CMOS) Quad Band Applications +35 dBm GSM Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55% GSM PAE 50% DCS/PCS PAE Small Footprint: 7 x 10mm Low Profile: 1.4mm Power Control Range: >50 dB GPRS Capable (Class 12) Moisture Sensitivity Level (MSL) 3 at 260 °C APPLICATIONS GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA AWT6108 GSM850/GSM900/DCS/PCS Quad Band Pwwoww.eDraAtamShpeleifti4eUr.cMomodule With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0 AWT6108 20 Pin 7mm x 10mm Surface Mount Module PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifiers power control range is typically 55dB, with the output power set by applying an analog voltage to VRAMP. The logical control inputs, TX_EN and BS, are both 1.8 V and 3 V logic compliant. The TX_EN is used to enable the amplifier typically with the TX burst. The BS is used to select which amplifier is enabled. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. All of the RF ports for this device are internally matched to 50 W. Internal DC blocks are provided at the RF ports. Figure 1: Block Diagram 08/2003 1 page AWT6108 Table 6: Electrical Characteristics for GSM850/900 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%, ZIN = ZOUT = 50W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_ENw=wHwI.GDHa)taSheet4U.com PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (FO) 824 880 - - 849 915 MHz Input Power 0 2 5 dBm Output Power (PMAX) 34.5 35 - dBm Freq = 824 to 915 MHz Degraded Output Power 32.0 32.5 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm PAE @ PMAX 48 55 - % Freq = 824 to 915 MHz Forward Isolation 1 - -37 -30 dBm TX_EN = LOW, PIN = 5 dBm Forward Isolation 2 - -25 -10 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolation (2FO @ DCS/PCS port) - -30 -20 dBm VRAMP = 0.2 V to VRAMP_MAX Harmonics 2fo 3fo - - -17 -5 -30 -15 dBm Over all output power levels Stability VSWR = 8:1 all phases, POUT < 34.5 dBm - - - - -36 -30 dBm FOUT < 1GHz FOUT > 1GHz Ruggedness - - 10:1 All load phases, POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz, - -86 -83 dBm FRX = 869 to 894 MHz, POUT < 34.5 dBm RX Noise Power FTX = 915 MHz, RBW = 100 kHz, - -81 -77 dBm FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, - -86 -83 dBm FRX = 935 to 960 MHz, POUT < 34.5 dBm Input VSWR - - 2.5:1 Over all output power levels PRELIMINARY DATA SHEET - Rev 1.0 08/2003 5 5 Page NOTES AWT6108 www.DataSheet4U.com PRELIMINARY DATA SHEET - Rev 1.0 08/2003 11 11 Page

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