|
|
|
부품번호 | AWT6108R 기능 |
|
|
기능 | GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module | ||
제조업체 | ANADIGICS | ||
로고 | |||
전체 12 페이지수
FEATURES
• InGaP HBT Technology
• Integrated Power Control (CMOS)
• Quad Band Applications
• +35 dBm GSM Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55% GSM PAE
• 50% DCS/PCS PAE
• Small Footprint: 7 x 10 mm
• Low Profile: 1.4 mm
• Power Control Range: >50 dB
• GPRS Capable (Class 12)
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
AWT6108R
GSM850/GSM900/DCS/PCS
Quad Band Pwowww.eDraAtamShpeleifti4eUr.cMomodule
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
AWT6108R
20 Pin 7 mm x 10 mm x 1.4 mm
Surface Mount Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifier’s power control range is typically
55dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 Ω. Internal DC blocks are provided at
the RF ports.
Figure 1: Block Diagram
01/2006
AWT6108R
Table 4: Digital Inputs
PARAMETER
MIN TYP
Logic High Voltage (VH)
1.2 -
Logic Low Voltage (VL)
--
Logic High Current (I H)
--
Logic Low Current (I L)
--
MAX w wUNwIT. D a t a S h e e t 4 U . c
VREG
V
0.5 V
30 µA
30 µA
Table 5: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Case Temperature (TC)
-20 - 85 oC
Supply Voltage (VBATT)
3.0 3.5 5.5
V
Regulated Voltage (VREG)
2.7 2.8 2.9
V
Regulated Current (IREG)
TX_EN = HIGH
TX_EN = LOW
- 6 8 mA
- 10 30 µA
Control Voltage for Maximum
Power (VRAMP_MAX)
-
- 1.6
V
Control Voltage for Minimum
Power (VRAMP_MIN)
- 0.2 0.25 V
VBATT = 5.5 V, VREG = 0V,
Power Supply Leakage Current - 1 10 µA VRAMP = 0V, TX_EN = LOW,
No RF Applied
VRAMP Input Capacitance
- 3 - pF
VRAMP Input Current
-
-
10
µA
V = VRAMP
RAMP_MAX
Turn On/Off Time
- 1 2 µs VRAMP = 0.2V to VRAMP_MAX
Duty Cycle
- - 50 %
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
4 PRELIMINARY DATA SHEET - Rev 1.0
01/2006
4페이지 AWT6108R
PERFORMANCE DATA
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0.2
www.DataSheet4U.com
Figure 3: GSM850/GSM900 Pout vs Vramp &Temperature
(2 TX slots)
VBATT = 3.5V, Pin = 2dBm
VREG = 2.8V, PW = 1154us
0.3 0.4 0.5 0.6 0.7
836.5MHz, +25C
897.5MHz, +25C
0.8 0.9 1 1.1
Vramp (V)
836.5MHz, -25C
897.5MHz, -25C
1.2 1.3
836.5MHz, +85C
1.4 1.5 1.6
897.5MHz, +85C
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
0.2
Figure 4: DCS/PCS Pout vs Vramp & Temperature
(2 TX slots)
VBATT = 3.5V, Pin = 2dBm
VREG = 2.8V, PW = 1154us
0.3 0.4 0.5 0.6 0.7
1747.5MHz,+25C
1880MHz, +25C
0.8 0.9 1 1.1
Vramp (V)
1747.5MHz, -25C
1880MHz, -25C
1.2 1.3 1.4 1.5 1.6
1747.5MHz, +85C
1880MHz, +85C
PRELIMINARY DATA SHEET - Rev 1.0
01/2006
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ AWT6108R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AWT6108 | Quad Band Power Amplifier Module | ANADIGICS |
AWT6108R | GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |