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AWT6108R 데이터시트 PDF




ANADIGICS에서 제조한 전자 부품 AWT6108R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AWT6108R 자료 제공

부품번호 AWT6108R 기능
기능 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module
제조업체 ANADIGICS
로고 ANADIGICS 로고


AWT6108R 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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AWT6108R 데이터시트, 핀배열, 회로
FEATURES
• InGaP HBT Technology
• Integrated Power Control (CMOS)
• Quad Band Applications
• +35 dBm GSM Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55% GSM PAE
• 50% DCS/PCS PAE
• Small Footprint: 7 x 10 mm
• Low Profile: 1.4 mm
• Power Control Range: >50 dB
• GPRS Capable (Class 12)
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
AWT6108R
GSM850/GSM900/DCS/PCS
Quad Band Pwowww.eDraAtamShpeleifti4eUr.cMomodule
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
AWT6108R
20 Pin 7 mm x 10 mm x 1.4 mm
Surface Mount Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifier’s power control range is typically
55dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 . Internal DC blocks are provided at
the RF ports.
Figure 1: Block Diagram
01/2006




AWT6108R pdf, 반도체, 판매, 대치품
AWT6108R
Table 4: Digital Inputs
PARAMETER
MIN TYP
Logic High Voltage (VH)
1.2 -
Logic Low Voltage (VL)
--
Logic High Current (I H)
--
Logic Low Current (I L)
--
MAX w wUNwIT. D a t a S h e e t 4 U . c
VREG
V
0.5 V
30 µA
30 µA
Table 5: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Case Temperature (TC)
-20 - 85 oC
Supply Voltage (VBATT)
3.0 3.5 5.5
V
Regulated Voltage (VREG)
2.7 2.8 2.9
V
Regulated Current (IREG)
TX_EN = HIGH
TX_EN = LOW
- 6 8 mA
- 10 30 µA
Control Voltage for Maximum
Power (VRAMP_MAX)
-
- 1.6
V
Control Voltage for Minimum
Power (VRAMP_MIN)
- 0.2 0.25 V
VBATT = 5.5 V, VREG = 0V,
Power Supply Leakage Current - 1 10 µA VRAMP = 0V, TX_EN = LOW,
No RF Applied
VRAMP Input Capacitance
- 3 - pF
VRAMP Input Current
-
-
10
µA
V = VRAMP
RAMP_MAX
Turn On/Off Time
- 1 2 µs VRAMP = 0.2V to VRAMP_MAX
Duty Cycle
- - 50 %
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
4 PRELIMINARY DATA SHEET - Rev 1.0
01/2006

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AWT6108R 전자부품, 판매, 대치품
AWT6108R
PERFORMANCE DATA
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0.2
www.DataSheet4U.com
Figure 3: GSM850/GSM900 Pout vs Vramp &Temperature
(2 TX slots)
VBATT = 3.5V, Pin = 2dBm
VREG = 2.8V, PW = 1154us
0.3 0.4 0.5 0.6 0.7
836.5MHz, +25C
897.5MHz, +25C
0.8 0.9 1 1.1
Vramp (V)
836.5MHz, -25C
897.5MHz, -25C
1.2 1.3
836.5MHz, +85C
1.4 1.5 1.6
897.5MHz, +85C
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
0.2
Figure 4: DCS/PCS Pout vs Vramp & Temperature
(2 TX slots)
VBATT = 3.5V, Pin = 2dBm
VREG = 2.8V, PW = 1154us
0.3 0.4 0.5 0.6 0.7
1747.5MHz,+25C
1880MHz, +25C
0.8 0.9 1 1.1
Vramp (V)
1747.5MHz, -25C
1880MHz, -25C
1.2 1.3 1.4 1.5 1.6
1747.5MHz, +85C
1880MHz, +85C
PRELIMINARY DATA SHEET - Rev 1.0
01/2006
7

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