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Número de pieza | K215 | |
Descripción | MOSFET ( Transistor ) - 2SK215 | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K215 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
2SK213, 2SK214, 2SK215, 2SK216
Typical Output Characteristics
500 3.5 www.DataSheTeCt4=U2.c5o°Cm
3.0
400
2.5
300
2.0
200
1.5
100
1.0
VGS = 0.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50
TC = 25°C
0.8
40 0.7
30 0.6
20 0.5
0.4
10 0.3
0.2
VGS = 0.1V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
500
VDS = 20 V
400
300
200
100
0 12345
Gate Source Voltage VGS (V)
3
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet K215.PDF ] |
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K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | Knox Inc |
K210 | MOSFET ( Transistor ) - 2SK210 | Toshiba Semiconductor |
K2101 | MOSFET ( Transistor ) - 2SK2101 | Fuji Electric |
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