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PDF CQDD-25N Data sheet ( Hoja de datos )
| Número de pieza | CQDD-25N | |
| Descripción | 25 AMP TRIAC 600 THRU 800 VOLTS | |
| Fabricantes | Central Semiconductor | |
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CQDD-25M
CQDD-25N
25 AMP TRIAC
600 THRU 800 VOLTS
CentralTM
www.DataSheet4U.com
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-25M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I2t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
VGM
di/dt
Tstg
TJ
ΘJA
ΘJC
CQDD CQDD
-25M -25N
600 800
25
150
94
40
1.0
10
16
10
-40 to +150
-40 to +125
60
1.7
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=35A, tp=380µs
VD=2/3 VDRM, RGK=∞, TC=125°C
6.0
TYP
11.1
28.2
18.4
1.03
1.74
MAX
10
2.0
30
60
50
1.50
2.50
1.80
UNITS
V
A
A
A2s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
mA
mA
mA
mA
V
V
V
V/µs
R1 (24-September 2004)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CQDD-25N.PDF ] | |
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