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PDF APTGT75DH120T Data sheet ( Hoja de datos )
| Número de pieza | APTGT75DH120T | |
| Descripción | Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTGT75DH120Twww.DataSheet4U.com
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT®
Power Module
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 OUT2
CR2
0/VBUS SENSE
NT C1
0/ V BU S
Q4
G4
E4
NT C2
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
110
75
175
±20
357
150A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page  
APTGT75DH120Twww.DataSheet4U.com
Operating Frequency vs Collector Current
60
50
ZCS
40
30 ZVS
VCE=600V
D=50%
RG= 4. 7Ω
TJ=125°C
Tc=75°C
20
10
Hard
switching
0
0 20 40 60 80
IC (A)
100 120
200
175
150
125
100
75
50
25
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ =125°C
TJ=25°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
0.5
0.9
0.4
0.7
0.3 0.5
0.2 0.3
0.1 0.1
0. 05
0
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT75DH120T.PDF ] | |
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