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PDF APTGT75TL60T3G Data sheet ( Hoja de datos )
| Número de pieza | APTGT75TL60T3G | |
| Descripción | Three level inverter Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT75TL60T3Gwww.DataSheet4U.com
Three level inverter
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 75A @ Tc = 80°C
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
100
75
140
±20
250
150A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
1 page  
APTGT75TL60T3Gwww.DataSheet4U.com
Output Characteristics (VGE=15V)
150
TJ=25°C
125
100 TJ=150°C
75
50
25
TJ=25°C
0
0 0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
150
TJ = 150°C
VGE=19V
125
100 VGE=13V
75 VGE=15V
50
VGE=9V
25
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
150
125
100
75
50
25
0
5
Transfert Characteristics
TJ=25°C
TJ=150°C
TJ=25°C
6 7 8 9 10 11 12
VGE (V)
Energy losses vs Collector Current
5
VCE = 300V
4
VGE = 15V
RG = 4.7Ω
TJ = 150°C
3
Eoff
2
Eon
1
0
0 25 50 75 100 125 150
IC (A)
Switching Energy Losses vs Gate Resistance
5
Eoff
4
3 Eon
2
VCE = 300V
1
VGE =15V
IC = 75A
TJ = 150°C
0
0 5 10 15 20 25 30 35 40
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
175
150
125
100
75
50 VGE=15V
25 TJ=150°C
RG=4.7Ω
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6 0.9
0.5 0.7
0.4
0.5
0.3
0.3
0.2
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
www.microsemi.com
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTGT75TL60T3G.PDF ] | |
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