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PDF APTGT50A120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT50A120TG | |
| Descripción | Phase leg Fast Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT50A120TGwww.DataSheet4U.com
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
VBUS
NT C2
Q1
G1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1
Q2
G2
E2
O UT
0/VBU S
NT C1
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
VBUS
E1
G1
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
75
50
100
±20
277
100A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT50A120TGwww.DataSheet4U.com
Operating Frequency vs Collector Current
80
70
60 ZVS
50 ZCS
40
VCE= 600V
D=50%
RG=18Ω
TJ =125°C
TC= 75°C
30
20
hard
10 switching
0
0 10 20 30 40 50 60 70 80
IC (A)
Forward Characteristic of diode
150
125
100
TJ=125°C
75
50
25
0
0
TJ=125°C
TJ=25°C
0.5 1 1.5
VF (V)
2
2.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0. 6
0.9
0. 5
Diode
0.7
0. 4
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT50A120TG.PDF ] | |
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