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PDF APTGT50H120T3G Data sheet ( Hoja de datos )
| Número de pieza | APTGT50H120T3G | |
| Descripción | Full - Bridge Fast Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT50H120T3Gwww.DataSheet4U.com
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 125°C
Max ratings
1200
75
50
100
±20
270
100A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT50H120T3Gwww.DataSheet4U.com
Operating Frequency vs Collector Current
80
60
ZCS ZVS
40
VCE=600V
D= 50%
RG=18Ω
TJ=125°C
TC=75°C
20
hard
switching
0
0 10 20 30 40 50 60 70
IC (A)
160
140
120
100
80
60
40
20
0
0
Forward Characteristic of diode
TJ=125°C
TJ=25°C
0.5 1 1.5 2 2.5
VF (V)
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Diode
0.9
0.8
0.7
0.6
0.5
0.4 0.3
0.2 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT50H120T3G.PDF ] | |
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