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Número de pieza | APTGT50H60T3 | |
Descripción | Full - Bridge Trench Field Stop IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT50H60T3 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Full - Bridge
Trench + Field Stop IGBT®
Power Module
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 50A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page APTGT50H60T3www.DataSheet4U.com
Operating Frequency vs Collector Current
120
100 ZCS
80 ZVS
VCE=300V
D=50%
RG=10Ω
TJ=150°C
T c= 85°C
60
40
Hard
20 switching
0
0 20 40 60 80
IC (A)
Forward Characteristic of diode
100
80
60
40
20
0
0
TJ =125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
1.6
1.4 0.9
Diode
1.2 0.7
1
0.8 0.5
0.6 0.3
0.4
0.2 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT50H60T3.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT50H60T3 | Full - Bridge Trench Field Stop IGBT Power Module | Advanced Power Technology |
APTGT50H60T3G | Full - Bridge Trench Field Stop IGBT Power Module | Microsemi Corporation |
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