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PDF VNQ810M-E Data sheet ( Hoja de datos )
| Número de pieza | VNQ810M-E | |
| Descripción | QUAD CHANNEL HIGH SIDE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VNQ810M-E
QUAD CHANNEL HIGH SIDE DRIVER
Table 1. General Features
Type
RDS(on)
Iout
VNQ810M-E
150mΩ (*) 0.6A (*)
(*) Per each channel
VCC
36V
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s PROTECTION AGAINST LOSS OF GROUND
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
SO-28 (DOUBLE ISLAND)
DESCRIPTION
The VNQ810M-E is a quad HSD formed by
assembling two VND810M-E chips in the same
SO-28 package. The VNQ810M-E is a monolithic
device made by using STMicroelectronics
VIPower M0-3 Technology, intended for driving
any kind of load with one side connected to
ground. Active VCC pin voltage clamp protects the
device against low energy spikes (see ISO7637
transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The current limitation
threshold is aimed at detecting the 21W/12V
standard bulb as an overload fault. The device
detects open load condition both in on and off
state . Output shorted to VCC is detected in the off
state. Device automatically turns off in case of
ground pin disconnection.
Table 2. Order Codes
Package
SO-28
Tube
VNQ810M-E
Note: (**) See application schematic at page 10
October 2004
Tape and Reel
VNQ810MTR-E
Rev. 1
1/21
1 page  
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VNQ810M-E
ELECTRICAL CHARACTERISTICS
(8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel)
Table 5. Power Output
Symbol
Parameter
Test Conditions
VCC (**) Operating Supply Voltage
VUSD (**) Undervoltage Shut-down
VOV (**) Overvoltage Shut-down
RON On State Resistance
IOUT=0.5A; Tj=25°C
IOUT=0.5A; VCC> 8V
Min.
5.5
3
36
IS (**) Supply Current
Off State; VCC=13V; VIN=VOUT=0V
Off State; VCC=13V; VIN=VOUT=0V;
Tj =25°C
On State; VCC=13V; VIN=5V; IOUT=0A
IL(off1) Off State Output Current
IL(off2) Off State Output Current
IL(off3) Off State Output Current
IL(off4) Off State Output Current
Note: (**) Per island
VIN=VOUT=0V
VIN=0V; VOUT=3.5V
VIN=VOUT=0V; VCC=13V; Tj =125°C
VIN=VOUT=0V; VCC=13V; Tj =25°C
0
-75
Typ.
13
4
12
12
5
Max.
36
5.5
150
300
40
Unit
V
V
V
mΩ
mΩ
µA
25 µA
7 mA
50 µA
0 µA
5 µA
3 µA
Table 6. Protection (Per each channel) (See note 1)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
TTSD Shut-down Temperature
150 175 200 °C
TR Reset Temperature
135 °C
Thyst
tSDL
Thermal Hysteresis
Status Delay in Overload Tj>TTSD
Conditions
7 15
°C
20 µs
Ilim Current limitation
Vdemag
Turn-off Output Clamp
Voltage
5.5V < VCC < 36V
IOUT=0.5A
0.7 0.9 1.4
1.4
VCC-41 VCC-48 VCC-55
A
A
V
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles
Table 7. VCC - Output Diode
Symbol
Parameter
VF Forward on Voltage
Test Conditions
-IOUT=0.53A; Tj=150°C
Min Typ Max Unit
0.6 V
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VNQ810M-E
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
.µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL<VOlmin.
2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is
pulled high (up to several mA), the pull-up resistor RPU
should be connected to a supply that is switched OFF
when the module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
Figure 9. Open Load detection in off state
INPUT
STATUS
V batt.
VPU
VCC
DRIVER
+
LOGIC
+
R
-
VOL
IL(off2)
OUT
RPU
RL
GROUND
11/21
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