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ICX254AL 데이터시트 PDF




Sony Corporation에서 제조한 전자 부품 ICX254AL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 ICX254AL 기능
기능 Diagonal 6mm (Type 1/3) CCD Image Sensor
제조업체 Sony Corporation
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ICX254AL 데이터시트, 핀배열, 회로
ICX254ALwww.DataSheet4U.com
Diagonal 6mm (Type 1/3) CCD Image Sensor for EIA B/W Video Cameras
Description
The ICX254AL is an interline CCD solid-state
image sensor suitable for EIA B/W video cameras
with a diagonal 6mm (Type 1/3) system. Compared
with the current product ICX054BL, basic
characteristics such as sensitivity, smear, dynamic
range and S/N are improved drastically from visible
light region to near infrared light region through the
adoption of EXview HAD CCDTM technology.
This chip features a field period readout system and
an electronic shutter with variable charge-storage
time.
16 pin DIP (Plastic)
Features
Sensitivity in near infrared light region
(+8dB compared with the ICX054BL, λ = 945nm)
Pin 1
High sensitivity (+6dB compared with the ICX054BL, no IR cut filter)
Low smear (–20dB compared with the ICX054BL)
High D range (+2dB compared with the ICX054BL)
High S/N
V
Low dark current
Excellent antiblooming characteristics
Continuous variable-speed shutter
No voltage adjustment
2
Pin 9 H 25
(Reset gate and substrate bias are not adjusted.)
Reset gate:
5V drive
Horizontal register: 5V drive
Optical black position
(Top View)
1
12
Device Structure
Interline CCD image sensor
Image size:
Diagonal 6mm (Type 1/3)
Number of effective pixels: 510 (H) × 492 (V) approx. 250K pixels
Total number of pixels: 537 (H) × 505 (V) approx. 270K pixels
Chip size:
6.00mm (H) × 4.96mm (V)
Unit cell size:
9.6µm (H) × 7.5µm (V)
Optical black:
Horizontal (H) direction : Front 2 pixels, rear 25 pixels
Vertical (V) direction : Front 12 pixels, rear 1 pixel
Number of dummy bits: Horizontal 16
Vertical 1 (even fields only)
Substrate material:
Silicon
TM
EXview HAD CCD is a trademark of Sony Corporation.
EXview HAD CCD is a CCD that drastically improves light efficiency by including near infrared light region as a basic structure of
HAD (Hole-Accumulation-Diode) sensor.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E99520-PS




ICX254AL pdf, 반도체, 판매, 대치품
Clock Equivalent Circuit Constant
Item
Capacitance between vertical transfer
clock and GND
Capacitance between vertical transfer
clocks
Capacitance between horizontal
transfer clock and GND
Capacitance between horizontal
transfer clocks
Capacitance between reset gate clock
and GND
Capacitance between substrate clock
and GND
Vertical transfer clock series resistor
Vertical transfer clock ground resistor
Horizontal transfer clock series resistor
Reset gate clock series resistor
Symbol
CφV1, CφV3
CφV2, CφV4
CφV12, CφV34
CφV23, CφV41
CφV13
CφV24
CφH1, CφH2
CφHH
CφRG
CφSUB
R1, R3
R2, R4
RGND
RφH
RφRG
Vφ1 Vφ2
ICX254AL
www.DataSheet4U.com
Min. Typ. Max. Unit Remarks
1500
pF
1000
pF
560 pF
330 pF
150 pF
270 pF
47 pF
22 pF
5 pF
320 pF
75
100
100
10
50
R1 CφV12 R2
CφV41
CφV1
CφV2
CφV23
CφV24
R4
CφV4 RGND CφV3
CφV34
CφV13
R3
RφH
Hφ1
CφH1
CφHH
RφH
Hφ2
CφH2
Vφ4 Vφ3
Vertical transfer clock equivalent circuit
RGφ
RφRG
Horizontal transfer clock equivalent circuit
CφRG
Reset gate clock equivalent circuit
–4–

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ICX254AL 전자부품, 판매, 대치품
ICX254AL
www.DataSheet4U.com
Clock Switching Characteristics
twh twl
tr
tf
Item Symbol
Unit Remarks
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Readout clock VT
2.3 2.5
0.5
0.5
µs
During
readout
Vertical transfer Vφ1, Vφ2,
clock
Vφ3, Vφ4
15 250 ns 1
During
imaging
Hφ
37 41
38 42
12 15
10 15 ns 2
During
parallel-serial
Hφ1
conversion Hφ2
5.6
0.012
0.012
µs
5.6
0.012
0.012
Reset gate clock φRG
11 15
75 79
6.5 4.5 ns
Substrate clock φSUB
1.5 2.0
1 When vertical transfer clock driver CXD1267AN is used.
2 tf tr – 2ns.
0.5
0.5
µs
During drain
charge
–7–

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