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부품번호 | AWT6168 기능 |
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기능 | GSM/GPRS/Polar EDGE Power Amplifier Module | ||
제조업체 | ANADIGICS | ||
로고 | |||
AWT6168
GSM/GPRS/Polar EwDwGwE.DaPtaoSwheeert4AUm.copmlifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
FEATURES
• Internal Reference Voltage
• Integrated Power Control Scheme
• InGaP HBT Technology
• ESD Protection on All Pins (2.5 kV)
• Low profile 1.3 mm
• Small Package Outline 7 mm x 7 mm
• EGPRS Capable (class 12)
GMSK MODE
• Integrated power control (CMOS)
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 50 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +30.5 dBm GSM850/900 Output Power
• +29.5 dBm DCS/PCS Output Power
• 25 % GSM850/900 PAE
• 25 % DCS/PCS PAE
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
• GMSK and 8-PSK Polar Modulation
Schemes
DCS/PCS_IN
DCS/PCS
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function. The amplifier’s power con-
trol range is typically 55 dB, with the output power set
by applying an analog voltage to VRAMP.
All of the RF ports for this device are internally
matched to 50 Ω . Internal DC blocks are provided at
the RF inputs.
DCS/PCS_OUT
BS
TX_EN
VBATT
CEXT
VRAMP
GSM850/900_IN
Bias/Power
Control
GSM850/900
Figure 1: Block Diagram
01/2005
GSM850/900_OUT
AWT6168
Table 4: Operating Conditions
PARAMETER
Case temperature (TC)
MIN TYP MAX UNITS
-20 -
85 °C
wCOwMwM.EDNaTSt a S h e e t 4 U . c o
Supply voltage (VBATT)
3.0 3.5 4.8
V
Power supply leakage current -
VBATT = 4.8 V, VRAMP = 0 V,
1 5 mA TX_EN = LOW
No RF applied
Control Voltage Range
0.2 - 1.6 V
Turn on Time (TON)
-
-
1
ms
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Turn Off Time (TOFF)
-
-
1
ms
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
Rise Time (TRISE)
- - 1 ms POUT = -10 dBm Y PMAX (within 0.2 dB)
Fall Time (TFALL)
- - 1 ms POUT = PMAX Y -10 dBm (within 0.2 dB)
VRAMP Input Capacitance
- 3 - pF
VRAMP Input Current
- - 10 mA
Duty Cycle
- - 50 %
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
PARAMETER
Logic High Voltage
Logic Low Voltage
Logic High Current
Logic Low Current
Table 5: Digital Inputs
SYMBOL
VIH
VIL
|IIH|
|IIL|
MIN TYP MAX UNITS
1.2 - 3.0
V
-
- 0.5
V
- - 30 mA
- - 30 mA
Table 6: Logic Control Table
OPERATIONAL MODE
BS
GSM850/900
LOW
DCS/PCS
HIGH
PA DISABLED
-
TX_EN
HIGH
HIGH
LOW
4 ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
4페이지 AWT6168
Table 9: Electrical Characteristics for DCS/PCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGwHw, wM.ODDatEaS=hLeOeWt4U.com
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency
1710
1850
-
-
1785
1910
MHz
Input Power
3 5 8 dBm
Output Power, PMAX
Degraded Output Power
32 33
29.5 30.5
-
-
dBm
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 3 dBm
PAE @ PMAX
- 50 -
% Freq = 1710 to 1910 MHz
Forward Isolation 1
Forward Isolation 2
Second Harmonic
- -37 -
- -17 -
- -20 -
dBm
dBm
dBm
TX_EN = LOW, PIN = 8 dBm
TX_EN =HIGH, VRAMP = 0.2 V,
PIN = 8 dBm
Over all output power levels
Third Harmonic
- -30 -
dBm Over all output power levels
Stability
VSWR = 8:1 All Phases , POUT < 32dBm
- - -36 dBm FOUT < 1 GHz
- - -30 dBm FOUT > 1 GHz
Ruggedness
10:1 -
-
- All Load Phases
RX Noise Power
Input Return Loss
- -80 -
dBm
FTX = 1785 MHz, RBW = 100 kHz,
FRX =1805 to 1880 MHz, POUT < 32 dBm
- -80 -
dBm
FTX = 1910 MHz, RBW = 100 kHz,
FRX = 1930 to 1990 MHz, POUT < 32 dBm
- - 2.5:1 VSWR Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1
01/2005
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
AWT6166 | GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module | ANADIGICS |
AWT6166R | GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module | ANADIGICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |