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부품번호 | PUMB14 기능 |
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기능 | PNP/PNP resistor-equipped transistors R1=47k-ohm R2=open | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 10 페이지수
PEMB14; PUMB14
www.DataSheet4U.com
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = open
Rev. 01 — 17 February 2005
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors.
Table 1: Product overview
Type number
Package
Philips
PEMB14
SOT666
PUMB14
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD14
PUMD14
NPN/NPN
complement
PEMH14
PUMH14
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place cost
1.3 Applications
s Low current peripheral driver
s Control of IC inputs
s Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
- - −50 V
- - −100 mA
33 47 61 kΩ
Philips Semiconductors
PEMB14; PUMB14www.DataSheet4U.com
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −1 mA
IC = −10 mA; IB = −0.5 mA
R1 bias resistor 1 (input)
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
--
--
--
--
100 -
--
33 47
--
−100
−1
−50
−100
-
−150
61
2.5
nA
µA
µA
nA
mV
kΩ
pF
1000
hFE
100
(1)
(2)
(3)
006aaa206
−1
VCEsat
(V)
−10−1
(1)
(2)
(3)
006aaa207
10
−10−1
−1
−10 −102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10−2
−10−1
−1
−10 −102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14405
Product data sheet
Rev. 01 — 17 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 10
4페이지 Philips Semiconductors
PEMB14; PUMB14www.DataSheet4U.com
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
9. Packing information
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
PEMB14
PUMB14
PUMB14
SOT666
SOT363
SOT363
4 mm pitch, 8 mm tape and reel;
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
Packing quantity
3 000
4 000
- -115
[2] -115
-
[3] -125
-
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
10 000
-
-135
-165
9397 750 14405
Product data sheet
Rev. 01 — 17 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 10
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