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PDF HAT2200WP Data sheet ( Hoja de datos )
| Número de pieza | HAT2200WP | |
| Descripción | Silicon N Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT2200WP
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 22 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 321
4
G
5 678
D DDD
www.DataSheet4U.com
REJ03G1678-0300
Rev.3.00
May 27, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 1 of 7
1 page  
HAT2200WP
Reverse Drain Current vs.
Source to Drain Voltage
20
16 10 V VGS = 0 V, –5 V
12
8
4
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSDF (V)
Maximum AvalanchwewEwn.eDragytavSsh.eet4U.com
Channel Temperature Derating
50
IAP = 20 A
40 VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.01
10 µ
1shot pulse
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT2200WP.PDF ] | |
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