(PDF) HAT2201R Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2201R
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.DataSheet4U.com REJ03G0233-0300Z Rev.3.00 Apr.07.2004 Rev.3.00, Apr.07.2004, page 1 of 7 1 page HAT2201R 20 16 Reverse Drain Current vs. Source to Drain Voltage 10 V VGS = 0 V, –5 V 12 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSDF (V) Maximum Avalanche Energwywvsw..DataSheet4U.com Channel Temperature Derating 5 IAP = 6 A 4 VDD = 50 V duty < 0.1 % Rg > 50 Ω 3 2 1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 10 D=1 1 0.1 0.01 0.001 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse 0.0001 10 µ 100 µ 1m θ ch - f(t) = γ s (t) x θ ch - f θ ch - f = 83.3 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T D= PW T 10 m 100 m 1 10 Pulse Width PW (s) 100 1000 10000 Rev.3.00, Apr.07.2004, page 5 of 7 5 Page

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PDF HAT2201R Data sheet ( Hoja de datos )