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PDF HAT2218R Data sheet ( Hoja de datos )
| Número de pieza | HAT2218R | |
| Descripción | Silicon N Channel Power MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT2218R
www.DataSheet4U.com
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0396-0300
Rev.3.00
Aug.23.2004
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
Outline
SOP-8
2
G1
78
D1 D1
56
S1/D2 S1/D2
4
G2
8 7 65
1 234
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
Ratings
Item
Symbol
MOS1
MOS2 & SBD
Drain to source voltage
VDSS
30
30
Gate to source voltage
VGSS
±20
±12
Drain current
Drain peak current
ID
ID(pulse)Note1
7.5
60
8.0
64
Reverse drain current
Channel dissipation
IDR
Pch Note2
7.5
1.5
8.0
1.5
Channel temperature Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00, Aug.23.2004, page 1 of 9
1 page  
HAT2218R
Reverse Drain Current vs.
Source to Drain Voltage
20
10 V
5V
10 VGS = 0V, –5 V
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Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 1shot pulse
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10 100 1000 10000
Pulse Width PW (S)
Rev.3.00, Aug.23.2004, page 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAT2218R.PDF ] | |
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