|
|
|
부품번호 | HAT2267H 기능 |
|
|
기능 | Silicon N Channel Power MOS FET Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 8 페이지수
HAT2267H
Silicon N Channel Power MOS FET
Power Switch
Features
• High speed switching
• Capable of 6 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 13 mΩ typ. (at VGS = 10 V)
• Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
4
G
5
D
SSS
123
www.DataSheet4U.com
REJ03G1463-0400
Rev.4.00
Jul 05, 2006
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
80
±20
25
100
25
15
30
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Jul 05, 2006 page 1 of 7
HAT2267H
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30 ID = 2 A, 5 A, 10 A
VGS = 6 V
20
2 A, 5 A, 10 A
10
VGS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
1
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 25 A
80 VDD = 40 V
25 V
10 V
60
VGS
VDS
40
20
16
12
8
20 VDD = 40 V
25 V
4
10 V
0
0
0 20 40 60 80 100
Gate Charge Qg (nc)
www.DataSheet4U.com
Forward Transfer Admittance vs.
Drain Current
100
30 Tc = –25°C
75°C
10 25°C
3
1
0.3 VDS = 10 V
0.1 Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300 Coss
100 Crss
30 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
300
Switching Characteristics
VGS = 10 V, VDS = 30 V
RG = 4.7 Ω, duty ≤ 1 %
100
30
10 td(on)
3
td(off)
tr
tf
1
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Rev.4.00 Jul 05, 2006 page 4 of 7
4페이지 HAT2267H
Package Dimensions
Package Name
LFPAK
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Previous Code
LFPAKV
MASS[Typ.]
0.080g
www.DataSheet4U.com
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
5
0.25 +0.05
–0.03
3.3
1
1.27
4
0.20 +0.05
–0.03
0° – 8°
0.75 Max
0.10
0.40 ± 0.06 0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2267H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Jul 05, 2006 page 7 of 7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HAT2267H.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HAT2267H | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |