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부품번호 | IR21064S 기능 |
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기능 | HIGH AND LOW SIDE DRIVER | ||
제조업체 | IRF | ||
로고 | |||
전체 9 페이지수
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Preliminary Data Sheet No. PD60162-L
IR2106(S)/IR21064(S)
IR2186(S)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Product Summary
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V (IR2106(4))
or 6 to 20V (IR2186)
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IR2106/IR2186)
VOFFSET
IO+/-
VOUT
600V max.
120 mA / 250 mA
10 - 20V 7 - 20V
(IR2106(4)) (IR2186)
ton/off (typ.)
Delay matching
180 ns
50 ns
Description
The IR2106/IR2186 are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Propri-
etary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature
a high pulse current buffer stage designed for mini-
mum driver cross-conduction.The floating channel can
be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates
up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
Packages
8 Lead SOIC
8 Lead PDIP
TO
LOAD
14 Lead SOIC
14 Lead PDIP
up to 600V
IR2106/IR2186
VCC
HIN
LIN
VSS
HO
VCC
VB
HIN VS
LIN
VSS COM
LO
(Refer to leads assignments for correct configuration)
IR21064
TO
LOAD
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1
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IR2106/IR21064/IR2186 (S)
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are
referenced to VSS/COM and are applicable to the respective input leads. The VO, IO and Ron parameters are referenced to
COM and are applicable to the respective output leads: HO and LO.
Symbol
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IIN+
IIN-
VCCUV+
VCCUV-
VBSUV+
VBSUV-
VCCUVH
VBSUVH
IO+
Definition
Logic “1” input voltage (IR2106(4)/IR2186)
Logic “0” input voltage (IR2106(4)/IR2186)
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input bias current
VIN = 5V (IR2106(4)/IR2186)
Logic “0” input bias current
VIN = 0V (IR2106(4)/IR2186)
VCC supply undervoltage positive going threshold
(IR2106(4))
(IR2186)
VCC supply undervoltage positive going threshold
(IR2106(4))
(IR2186)
VBS supply undervoltage negative going threshold
(IR2106(4))
(IR2186)
VBS supply undervoltage negative going threshold
(IR2106(4))
(IR2186)
Hysteresis (IR2106(4))
(IR2186)
Output high short circuit pulsed current
IO- Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.7 —
—
VCC = 10V to 20V
— — 0.8
VCC = 10V to 20V
V
— 0.8 1.4
IO = 20 mA
— 0.3 0.6
IO = 20 mA
— — 50
VB = VS = 600V
20 60 150
VIN = 0V or 5V
50 120 240
VIN = 0V or 5V
µA
—5
20
—1
2
8.0 8.9 9.8
4.5 5.2 5.9
7.4 8.2 9.0
4.1 4.8 5.5
8.0 8.9 9.8
5.5 6.2 6.9
V
7.4 8.2 9.0
5.1 5.8 6.5
0.3 0.7 —
0.1 0.4 —
120 200 —
mA
250 350 —
VO = 0V,
PW ≤ 10 µs
VO = 15V,
PW ≤ 10 µs
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4페이지 Case Outlines
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IR2106/IR21064/IR2186 (S)
01-3003 01
8 Lead PDIP
(MS-012AA) 01-0021 09
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8 Lead SOIC
7
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다운로드 | [ IR21064S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |