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부품번호 | KFG5616Q1A-PEB5 기능 |
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기능 | OneNAND Specification FLASH MEMORY | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
OneNAND256(KFG5616x1A-xxB5)
FLASHwwMw.EDaMtaSOheRet4YU.com
OneNANDTM Specification
Density
256Mb
Part No.
KFG5616Q1A-DEB5
KFG5616Q1A-PEB5
KFG5616D1A-DEB5
KFG5616D1A-PEB5
KFG5616U1A-DIB5
KFG5616U1A-PIB5
VCC(core & IO)
1.8V(1.7V~1.95V)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
3.3V(2.7V~3.6V)
Temperature
Extended
Extended
Extended
Extended
Industrial
Industrial
PKG
67FBGA(LF)
48TSOP1
67FBGA(LF)
48TSOP1
67FBGA(LF)
48TSOP1
Version: Ver. 1.1
Date: Aug 12, 2005
1
OneNAND256(KFG5616x1A-xxB5)
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1.2 Flash Product Type Selector
Samsung offers a variety of Flash solutions including NAND Flash, OneNAND™ and NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
Erase Suspend/Resume
Copyback
Lock/Unlock/Lock-Tight
ECC
Scalability
NAND
Samsung Flash Products
OneNAND™
•
•
• (EDC)
External (Hardware/Software)
•
•
•
• (Max 64 Blocks)
•
• (ECC)
•
Internal
•
NOR
•
•
•
•
X
1.3 Ordering Information
K F G 56 1 6 X 1 A - X X B 5
Speed
Samsung
OneNAND Memory
5 : 54MHz
6 : 66MHz
Product Line desinator
Device Type
G : Single Chip
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
E = Extended Temp. (-30 °C to 85 °C)
Density
I = Industrial Temp. (-40 °C to 85 °C)
56 : 256Mb
Package
D : FBGA(Lead Free)
Organization
P : TSOP(Lead Free)
x16 Organization
Version
Operating Voltage Range
A : 2nd Generation
Q : 1.8V(1.7 V to 1.95V)
D : 2.65V(2.4V to 2.9V)
Page Architecture
U : 3.3V(2.7 V to 3.6V)
1 : 1KB Page
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4페이지 OneNAND256(KFG5616x1A-xxB5)
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1.6 General Overview
OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control
logic, a NAND Flash array, and 3KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 2KB
for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of
~76ns.
The device operates up to a maximum host-driven clock frequency of 54MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2) with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter-
mined by programmable read latency.
OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or
to provide identification capabilities.
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7페이지 | |||
구 성 | 총 70 페이지수 | ||
다운로드 | [ KFG5616Q1A-PEB5.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
KFG5616Q1A-PEB5 | OneNAND Specification FLASH MEMORY | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |