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PDF ATF-521P8 Data sheet ( Hoja de datos )
| Número de pieza | ATF-521P8 | |
| Descripción | High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package | |
| Fabricantes | AVAGO TECHNOLOGIES | |
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ATF-521P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
www.DataSheet4U.com
Description
Avago Technologies’ ATF‑521P8 is a single-voltage high
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a medium-power, high-linearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm x
2mm x 0.75mm. Its backside metalization provides ex‑
cellent thermal dissipation as well as visual evidence of
solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices
are 100% RF & DC tested.
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option available
Specifications
• 2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
• 26.5 dBm output power at 1 dB gain compression
• 1.5 dB noise figure
• 17 dB Gain
• 12.5 dB LFOM[4]
Applications
• Front-end LNA Q2 and Q3, driver or pre-driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL and MMDS applica‑
tions
• General purpose discrete E-pHEMT for other high linear‑
ity applications
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
2Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
Note:
1.
Enhancement mode technology
eliminating the need of negative
egmatpelovyosltaagsienagslesopcoiastietidvewVitghs,
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note A004R: Electrostatic
Discharge Damage and Control.
1 page  
ATF-521P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
www.DataSheet4U.com
50
45
40
35
30
25
20
4.5V
4V
15 3V
10
100 150 200 250 300 350 400
Id (mA)
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
45
40
35
30
25
20 4.5V
4V
15 3V
10
100 150 200 250 300 350 400
Id (mA)
Figure 9. OIP3 vs. Ids and Vds at 900 MHz.
50
45
40
35
30
25
20
4.5V
4V
15 3V
10
100
150 200 250
300 350 400
Id (mA)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
35
30
25
20
4.5V
15 4V
3V
10
100 150 200 250 300 350 400
Idq (mA)
Figure 11. P1dB vs. Idq and Vds at 2 GHz.
35
30
25
20
4.5V
15 4V
3V
10
100 150 200 250 300 350 400
Idq (mA)
Figure 12. P1dB vs. Idq and Vds at 900 MHz.
35
30
25
20
4.5V
15 4V
3V
10
100 150 200 250 300 350 400
Idq (mA)
Figure 13. P1dB vs. Idq and Vds at 3.9 GHz.
17 17
12
16 16
11
15 15
10
14 14
9
13 13
8
12 4.5V 12 4.5V 7 4.5V
4V 4V
4V
11 3V 11 3V 6 3V
10
100 150 200 250 300 350 400
Id (mA)
Figure 14. Small Signal Gain vs Ids and Vds
at 2 GHz.
10
100 150 200 250 300 350 400
Id (mA)
Figure 15. Small Signal Gain vs Ids and Vds
at 900 MHz.
5
100 150 200 250 300 350 400
Id (mA)
Figure 16. Small Signal Gain vs Ids and Vds
at 3.9 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
5 Page 
ATF-521P8 Typical Scattering Parameters, VDS = 4.5V, IDS= 120 mA
FGrHezq . Mag. S11 Ang.
dBS2 1 Mag. Ang. S12 dB
0.1 0.913 -84.6
34.2 51.26 135.4 -36.4
0.2 0.900 -125.0 30.3 32.80 115.4 -33.9
0.3 0.896 -142.0 27.4 23.39 106.1 -33.4
0.4 0.893 -152.3 25.1 17.89 100.3 -32.9
0.5 0.882 -158.4 23.4 14.75 96.3 -32.6
0.6 0.895 -164.2 21.8 12.36 92.9 -32.7
0.7 0.893 -167.8 20.6 10.71 90.5 -32.4
0.8 0.895 -170.8 19.5 9.39 88.0 -32.3
0.9 0.897 -173.0 18.5 8.44 86.1 -32.2
1
0.895 -175.5
17.6 7.59 83.6 -31.8
1.5 0.893 176.0
14.1 5.07 75.3 -31.1
2
0.889 169.2
11.8 3.89 67.8 -30.0
2.5 0.882 163.6
10.0 3.15 61.2 -29.0
3
0.888 157.9
8.4 2.62 54.6 -28.2
4
0.883 146.8
5.9 1.97 40.7 -26.5
5
0.885 137.7
3.8 1.55 28.2 -25.2
6
0.892 128.0
2.1 1.28 16.7 -24.0
7
0.894 120.4
0.6 1.08 5.1 -22.8
8 0.880 105.7 -1.0 0.89 -8.7 -21.2
9 0.876 96.5 -1.9 0.81 -20.8 -20.1
10 0.879 84.4 -3.0 0.71 -32.7 -19.3
11 0.889 72.8 -3.8 0.65 -44.3 -18.6
12 0.881 62.4 -5.2 0.55 -56.0 -18.1
13 0.893 54.0 -6.3 0.48 -66.6 -17.7
14 0.891 42.1 -7.2 0.44 -72.6 -17.3
15 0.888 34.1 -8.3 0.39 -79.2 -16.8
16 0.845 25.3 -9.1 0.35 -89.6 -16.1
17 0.828 13.2 -11.2 0.28 -95.9 -15.6
18 0.827 -10.2 -11.0 0.28 -92.5 -16.6
Mag. S22
MSG/MAG
Ang.
0.015 49.0
0.020 31.2
0.021 25.3
0.023 23.5
0.023 22.5
0.023 20.6
0.024 20.4
0.024 21.1
0.025 22.1
0.026 23.0
0.028 25.5
0.032 27.9
0.036 30.2
0.039 30.2
0.047 29.7
0.055 26.3
0.063 21.9
0.072 18.2
0.087 10.6
0.099 3.2
0.108 -5.2
0.118 -13.5
0.125 -23.1
0.130 -31.4
0.136 -38.4
0.144 -45.9
0.157 -55.0
0.167 -64.2
0.147 -86.1
www.DataSheet4U.com
Mag. Ang. dB
0.423 -106.6 35.3
0.499 -139.4 32.1
0.522 -153.4 30.5
0.530 -161.1 28.9
0.531 -165.0 28.1
0.537 -168.4 27.3
0.537 -171.2 26.5
0.539 -173.1 25.9
0.539 -174.8 25.3
0.540 -176.9 24.7
0.538 177.4 22.6
0.528 172.2 20.8
0.526 168.1 19.4
0.528 163.9 16.9
0.536 155.7 13.6
0.556 148.1 11.6
0.576 140.5 10.2
0.591 133.1 8.9
0.585 124.3 6.6
0.602 114.9 5.7
0.605 104.5 4.7
0.624 94.2 4.3
0.642 83.4 2.7
0.664 72.4 2.2
0.697 65.1 1.2
0.732 56.7 0.4
0.751 50.4 -1.5
0.821 44.0 -3.9
0.654 39.9 -4.3
Typical Noise Parameters, VDS = 4.5V, IDS = 120 mA
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Rn
Ang.
0.5 0.60 0.19 162.00 3.0
1.0 0.72 0.30 164.00 2.6
2.0 0.81 0.44 176.97 2.0
3.0 0.92 0.56 -164.98 2.0
4.0 1.24 0.59 -155.51 3.4
5.0 1.50 0.70 -136.55 11.1
6.0 1.60 0.75 -128.59 16.0
7.0 1.88 0.81 -117.31 24.0
8.0 2.02 0.68 -109.54 28.8
Ga
dB
20.0
18.3
15.9
13.6
11.1
9.7
8.7
7.6
5.6
40.0
30.0
MSG
20.0
10.0
0.0
-10.0
MAG
S21
-20.0
0
5 10 15
FREQUENCY (GHz)
Figure 42. MSG/MAG and |S21|2 vs.
Frequency at 4.5V, 120 mA.
20
Notes:
1. Facamslinectuvaolalfut1ee6ds.naRtoe2ifse eGrHftiogzutahrneedmnhoeigiashseueprreaamrraeembnetastseemrdaaopdnpelmaictae1ta6isoudnriefsfemecreetinnottnsimfwohpr iemledoatrhneecienFsmfouinrssmbineagltoiaownn.2ATGNHNz Ph5avteesbteseynsteemxt.raFproomlattehde.sTehme eFamsinuvraelmueesnatsreabtaruseedFmoinnis
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
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| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet ATF-521P8.PDF ] | |
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