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ATF-531P8 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


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부품번호 ATF-531P8 기능
기능 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
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ATF-531P8 데이터시트, 핀배열, 회로
Agilent ATF-531P8 High Linearitywww.DataSheet4U.com
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC [3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
3Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.
Features
Single voltage operation
High linearity and gain
Low noise figure
Excellent uniformity in product
specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option
available
Specifications
2 GHz; 4V, 135 mA (Typ.)
38 dBm output IP3
0.6 dB noise figure
20 dB gain
10.7 dB LFOM[4]
24.5 dBm output power at 1 dB gain
compression
Applications
Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver amplifier for WLAN,
WLL/RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications




ATF-531P8 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
RF Input
2.2 pF
3.3 pF
50 Ohm
.02 λ
110 Ohm
.03 λ
22 nH
15 Ohm
DUT
100 pF
Gate
DC Supply
110 Ohm 50 Ohm
.03 λ .02 λ
4.7 pF
RF Output
12 nH
2.2 µF
Drain
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA
quiesent bias. The gamma load and source over frequency are shown in the table below:
Freq
(GHz)
0.9
2.0
3.9
5.8
Gamma Source
Mag Ang
0.616
0.310
0.421
0.402
-37.1
34.5
167.5
-162.8
Gamma Load
Mag Ang
0.249
0.285
0.437
0.418
130.0
168.3
-161.6
-134.1
OIP3
(dBm)
40.3
41.5
41.5
41.0
Gain
(dB)
16.5
13.4
10.5
7.9
P1dB
(dBm)
23.4
24.8
24.7
24.7
PAE
(%)
43.2
51.9
42.8
36.6
4

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ATF-531P8 전자부품, 판매, 대치품
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3, continued
45
40
35
30
25 -40°C
25°C
85°C
20
0.5
1.5 2.5 3.5 4.5
FREQUENCY (GHz)
5.5
Figure 24. OIP3 vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
80
70
60
50
40
30
20
10
0
0.5
-40°C
25°C
85°C
1.5 2.5 3.5 4.5
FREQUENCY (GHz)
5.5
Figure 27. PAE vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
20
15
10
5 -40°C
25°C
85°C
0
0.5 1.5
2.5 3.5
4.5
FREQUENCY (GHz)
5.5
Figure 25. Small Signal Gain vs. Temp and
Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
www.DataSheet4U.com
30
25
20
15 -40°C
25°C
85°C
10
0.5
1.5 2.5 3.5 4.5
FREQUENCY (GHz)
5.5
Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-531P8

High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package

Agilent
Agilent
ATF-531P8

High Linearity Enhancement Mode Pseudomorphic HEMT

AVAGO
AVAGO

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