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Número de pieza | TK15A60U | |
Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMwOwSwⅡ.D)ataSheet4U.com
TK15A60U
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
±30
15
30
40
81
15
4
150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2009-09-29
1 page TK15A60U
www.DataSheet4U.com
rth – tw
10
1
0.1
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
10μ
100μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1m
10m
100m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse) *
ID max (Continuous)
10
100 μs *
1 ms *
1 DC operation
Tc = 25°C
0.1
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100 1000
Drain−source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 0.63mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK15A60U.PDF ] |
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