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PDF BUK7510-55AL Data sheet ( Hoja de datos )
| Número de pieza | BUK7510-55AL | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7510-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 3 January 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General-Purpose Automotive (GPA) TrenchMOS technology
specifically optimized for linear operation. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175 °C rated
Stable operation in linear mode
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V and 24 V loads
DC linear motor control
Automotive systems
Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 4
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
inductive load
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 12
and 13
[1] Continuous current is limited by package.
Min Typ Max Unit
[1] - - 75 A
- - 300 W
- - 1.1 J
- 8.5 10 mΩ
1 page  
NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOwS swtawnd.aDrdaletveal FS EhTe e t 4 U .
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
vertical in still air
thermal resistance
from junction to
mounting base
see Figure 5
Min Typ Max Unit
- 60 - K/W
-
0.25 0.5
K/W
1
Zth(j-mb)
(K/W) δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aaa734
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 μA; VGS = 0 V;
Tj = -55 °C
ID = 250 μA; VGS = 0 V;
Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10 and 11
50
55
2
-
-
3
-
-
4
ID = 1 mA; VDS = VGS;
Tj = -55 °C; see Figure 10 and 11
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 10 and
11
-
1
-
-
4.4
-
Unit
V
V
V
V
V
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOwSwswt.aDnadtaaSrhdeelet4vUe.lcoFmET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1
b1
L
L2
123
ee
b
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
eL
L1
L2
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
Fig 17. Package outline SOT78 (TO-220AB)
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
EUROPEAN
PROJECTION
ISSUE DATE
05-03-22
05-10-25
© NXP B.V. 2008. All rights reserved.
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