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PDF CSPESD301 Data sheet ( Hoja de datos )

Número de pieza CSPESD301
Descripción 1 / 2 and 3-Channel ESD Arrays in CSP
Fabricantes California Micro Devices 
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CSPESDww3w0.D1at/a3Sh0ee2t4/U3.c0om3
1,2 and 3-Channel ESD Arrays in CSP
Features
• 1, 2 or 3 channels of ESD protection
• ±15kV ESD protection (IEC 61000-4-2, contact
discharge)
• ±30kV ESD protection (HBM)
• Supports both AC and DC signal applications
• Low leakage current (<100nA)
• Chip Scale Package features extremely low lead
inductance for optimum ESD and filter perfor-
mance
• 4 bump, 1.06 x 0.93mm footprint Chip Scale Pack-
age (CSP)
• Lead-free version available
Applications
• I/O port protection
• EMI filtering for data ports
• Cellphones, notebook computers, PDAs
• Wireless Handsets
• MP3 Players
• Digital Still Cameras
• Handheld PCs
Product Description
The CSPESD301/302/303 is a family of 1, 2, and 3-
channel ESD protection arrays, which integrate two,
three and four identical avalanche-style diodes. It is
intended that one of these diodes is connected to GND
and the other diodes provide ESD protection for up to 3
lines depending upon the configuration utilized. The
back-to-back diode connections provide ESD protec-
tion for nodes that have AC signals up to 5.9V peak.
These devices provide a very high level of protection
for sensitive electronic components that may be sub-
jected to electrostatic discharge (ESD). The diodes
are designed and characterized to safely dissipate
ESD strikes of ±15kV, well beyond the maximum
requirements of the IEC 61000-4-2 international stan-
dard. Using the MIL-STD-883 (Method 3015) specifica-
tion for Human Body Model (HBM) ESD, these devices
protection against contact discharges at greater than
±30kV. The diodes also provide some EMI filtering,
when used in combination with a PCB trace or series
resistor.
These devices are particularly well suited for portable
electronics (e.g. cellular telephones, PDAs, notebook
computers) because of their small package format and
easy-to-use pin assignments.
The CSPESD301/2/3 is available in a space-saving,
low-profile, chip-scale package with optional lead-free
finishing.
Electrical Schematics
A2 B1
A2 B1 B2
A1 A2 B1 B2
CSPESD301
CSPESD302
CSPESD303
© 2003 California Micro Devices Corp. All rights reserved.
12/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
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CSPESD301 pdf
CSPESDww3w0.D1at/a3Sh0ee2t4/U3.c0om3
Performance Information (cont’d)
I (µA)
8
6
4
2
-8 -6 -4 -2
-2
-4
-6
-8
2 4 68
V (V)
Figure 4. Low Current I-V Curve
High Current I-V Characteristic - Pads A1 to A2
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12
Voltage [V]
Figure 5. High Current I-V Curve
© 2003 California Micro Devices Corp. All rights reserved.
12/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
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