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PDF K1S64161CC Data sheet ( Hoja de datos )
| Número de pieza | K1S64161CC | |
| Descripción | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
| Fabricantes | Samsung semiconductor | |
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K1S64161CC
Document Title
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
www.DataSheet4U.com
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
- Design Target
0.1 Revised
- Filled out ICC2 and ISB1 value
ICC2(max) : 40mA
ISB1(max,< 40°C) : 120µA
ISB1(max,< 85°C) : 180µA
- Changed tOH from min.5ns into min.3ns
- Added tCSHP(CS High Pulse Width) as min.10ns
- Added tWHP(WE High Pulse Width) as min.5ns
1.0 Finalize
- Added Lead Free Product
Draft Date
April 12, 2004
Remark
Advanced
November 3, 2004 Preliminary
April 06, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
April 2005
1 page  
K1S64161CC
www.DataSheet4U.com
UtRAM
PRODUCT LIST
Industrial Temperature Product(-40~85°C)
Part Name
K1S64161CC-FI70
K1S64161CC-BI70
Function
48-FBGA, 70ns, 2.9V
48-FBGA, 70ns, 2.9V, LF
1. LF : Lead Free Product
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCCQ+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
0.8 x VCCQ
-0.23)
Test Condition
VIN=0V
VIO=0V
Typ
2.9
0
-
-
Min
-
-
Max
3.1
0
VCCQ+0.22)
0.6
Unit
V
V
V
V
Max Unit
8 pF
10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
Output leakage current
ILI VIN=Vss to VCCQ
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to VCCQ
Average operating current ICC2 Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(CMOS)
ISB11)
Other inputs=0~VCCQ
1) CS1≥VCCQ-0.2V, CS2≥VCCQ-0.2V(CS1
controlled) or
2) 0V ≤ CS2 ≤ 0.2V(CS2 controlled)
1. Standby mode is supposed to be set up after at least one active operation.after power up.
ISB1 is measured after 60ms from the time when standby mode is set up.)
< 40°C
< 85°C
Min Typ Max Unit
-1 -
1 µA
-1 -
1 µA
- - 40 mA
- - 0.4 V
2.4 - - V
- - 120 µA
- - 180 µA
- 5 - Revision 1.0
April 2005
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K1S64161CC.PDF ] | |
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