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PDF EM620FV8B Data sheet ( Hoja de datos )
| Número de pieza | EM620FV8B | |
| Descripción | 256K x 8 bit Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Emerging Memory & Logic Solutions | |
| Logotipo |  |
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Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
0.3
0.4
History
Initial Draft
0.1 Revision
0.2 Revision
0.3 Revision
0.4 Revision
Remove BYTE option information
Remove UB, LB information
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)
VIH level change from 2.0V to 2.2V
EM62ww0wF.DaVta8ShBeet4SU.ceomries
Low Power, 256Kx8 SRAM
Draft Date
June 7, 2007
June 15, 2007
June 21, 2007
July 2, 2007
Remark
Aug. 16, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
EM62ww0wF.DaVta8ShBeet4SU.ceomries
Low Power, 256Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
VCC
VSS
VIH
VIL
Min
2.7
0
2.2
-0.23)
Typ Max Unit
3.3 3.6 V
0 0V
-
VCC + 0.22)
V
- 0.6 V
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Input/Ouput capacitance
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Average operating current
Symbol
Test Conditions
ILI VIN=VSS to VCC
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL
VIO=VSS to VCC
ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
ICC1
Cycle time=1µs, 100% duty, IIO=0mA,
CS1<0.2V, CS2>VCC-0.2V,
VIN<0.2V or VIN>VCC-0.2V
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH,
VIN=VIL or VIH
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current (CMOS)
VOL
VOH
ISB
ISB1
IOL = 2.1mA
IOH = -1.0mA
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
CS1>VCC-0.2V, CS2>VCC-0.2V (CS controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~VCC
(Typ. condition : VCC=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
5
Min Typ Max Unit
-1 - 1 uA
-1 - 1 uA
- - 3 mA
- - 3 mA
45ns
55ns
70ns
-
-
-
- 35
- 30 mA
- 25
- - 0.4 V
2.4 - - V
- - 0.3 mA
LF - 11) 10 uA
5 Page 
EM62ww0wF.DaVta8ShBeet4SU.ceomries
Low Power, 256Kx8 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
2. Product Type
3. Density
4. Function
5. Technology
6. Operating Voltage
1. Memory Component
EM --------------------- Memory
2. Product Type
6 ------------------------ SRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
2 ----------------------- Multiplexed
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
5. Technology
F ------------------------- Full CMOS
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
10. Speed
9. Package
8. Generation
7. Organization
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
9. Package
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 ---------------------- 100ns
12 ---------------------- 120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM620FV8B.PDF ] | |
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