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PDF BF1207 Data sheet ( Hoja de datos )
| Número de pieza | BF1207 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
1 page  
Philips Semiconductors
BF1207www.DataSheet4U.com
Dual N-channel dual gate MOSFET
Table 7: Static characteristics …continued
Tj = 25 °C.
Symbol Parameter
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V
amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A
VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V;
[1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
Min Typ Max Unit
- - 50 nA
- - 50 nA
- - 20 nA
20
ID
(mA)
16
001aac742
(1)
(2)
12
(3)
8
(4)
4
(6)
(5)
0
012345
VGG (V)
(1) ID(A); RG1 = 47 kΩ.
(2) ID(A); RG1 = 68 kΩ.
(3) ID(A); RG1 = 100 kΩ.
(4) ID(B); RG1 = 100 kΩ.
(5) ID(B); RG1 = 68 kΩ.
(6) ID(B); RG1 = 47 kΩ.
VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 2. Drain currents of MOSFET A and B as function
of VGG
G1B
G2
G1A
RG1
VGG
DB
S
DA
001aac881
VGG = 5 V: amplifier A is on; amplifier B is off.
VGG = 0 V: amplifier A is off; amplifier B is on.
Fig 3. Functional diagram
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 22
5 Page 
Philips Semiconductors
BF1207www.DataSheet4U.com
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9: Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f s11
(MHz) Magnitude Angle
(ratio)
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude Angle
(ratio)
(deg)
s22
Magnitude Angle
(ratio)
(deg)
50 0.987
−4.169 2.87
175.5 0.0008
83.82 0.992
−1.42
100 0.983
−8.109 2.95
171.14 0.0015
82.08 0.992
−2.86
200 0.976
−15.97 2.93
162.44 0.0028
77.50 0.990
−5.66
300 0.966
−23.844 2.89
153.77 0.0041
73.45 0.989
−8.49
400 0.952
−31.575 2.84
145.23 0.0053
69.42 0.986
−11.28
500 0.935
−35.225 2.78
136.82 0.0063
65.72 0.984
−14.03
600 0.917
−46.678 2.72
128.50 0.0072
61.48 0.981
−16.80
700 0.898
−54.094 2.65
120.44 0.0079
58.05 0.977
−19.55
800 0.876
−61.205 2.57
112.33 0.0084
52.74 0.974
−22.32
900 0.852
−68.299 2.49
104.32 0.0089
48.61 0.970
−25.10
1000 0.826
−75.321 2.41
96.42 0.0091
43.86 0.967
−27.88
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet BF1207.PDF ] | |
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