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PDF PMWD18UN Data sheet ( Hoja de datos )
| Número de pieza | PMWD18UN | |
| Descripción | Dual N-channel uTrenchMOS ultra low level FET | |
| Fabricantes | NXP Semiconductors | |
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PMWD18UN
M3D647 Dual N-channel µTrenchMOS™ ultra low level FET
Rev. 02 — 23 February 2004
Product data
1. Product profile
1.1 Description
Dual common drain N-channel enhancement mode field-effect transistor in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package
s Very low threshold
s Low profile
s Fast switching.
1.3 Applications
s Portable appliances
s Battery management
s PCMCIA cards
s Load switching.
1.4 Quick reference data
s VDS ≤ 30 V
s Ptot ≤ 2.3 W
s ID ≤ 7.8 A
s RDSon ≤ 21.5 mΩ.
2. Pinning information
Table 1:
Pin
1,8
2,3
4
5
6,7
Pinning - SOT530-1 (TSSOP8), simplified outline and symbol
Description
Simplified outline
drain (d)
source1 (s1)
85
gate1 (g1)
gate2 (g2)
source2 (s2)
1
Top view
4
MBK885
SOT530-1 (TSSOP8)
Symbol
d
g1 s1 g2
d
s2
mbl600
1 page  
Philips Semiconductors
PMWD18UNwww.DataSheet4U.com
Dual N-channel µTrenchMOS™ ultra low level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 4.5 V; ID = 5 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 1.8 V; ID = 4.5 A; Figure 7 and 8
VGS = 2.5 V; ID = 5 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 4 A; VDD = 16 V; VGS = 4.5 V; Figure 13
VGS = 0 V; VDS = 16 V; f = 1 MHz; Figure 11
VDD = 10 V; ID = 1 A; VGS = 4.5 V; RG = 6 Ω
VSD source-drain (diode forward) voltage IS = 5 A; VGS = 0 V; Figure 12
trr reverse recovery time
Qr recovered charge
IS = 5 A; dIS/dt = −100 A/µs; VR = 30 V;
VGS = 0 V
Min Typ Max Unit
30 -
27 -
0.45 0.7
-
-
-
V
V
V
- - 1 µA
- - 100 µA
- - 100 nA
- 18 21.5 mΩ
- 31 37 mΩ
- 24 35 mΩ
- 20 23.5 mΩ
- 24.7 - nC
- 2.2 - nC
- 6.4 - nC
- 1526 - pF
- 210 - pF
- 160 - pF
- 15 - ns
- 21 - ns
- 57 - ns
- 26 - ns
- 0.87 1.2 V
- 55 - ns
- 21 - nC
9397 750 12706
Product data
Rev. 02 — 23 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
PMWD18UNwww.DataSheet4U.com
Dual N-channel µTrenchMOS™ ultra low level FET
9. Data sheet status
Level Data sheet status[1]
I Objective data
Product status[2][3]
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
9397 750 12706
Product data
Rev. 02 — 23 February 2004
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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