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부품번호 | H55S1G62MFP-60 기능 |
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기능 | 1Gb (64Mx16bit) Mobile SDRAM | ||
제조업체 | Hynix Semiconductor | ||
로고 | |||
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1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of
1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 16,777,216 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Jul. 2008
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
INFORMATION for Hynix KNOWN GOOD DIE
With the advent of Mullti-Chip package (MCPs), Package on Package (PoP) and system in a package (SiP) applications,
customer demand for Known Good Die (KGD) has increased.
Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu-
tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies
such as systems-in-a-package (SIPs) and multi-chip packages (MCPs) to reduce the board area required, making them
ideal for handheld PCs, and many other portable digital applications.
Hynix Mobile DRAM will be able to containue its constant effort of enabling the Advanced package products of all appli-
cation customers.
- Please Contact Hynix Office for Hynix KGD product availability and informations.
Rev 1.2 / Jul. 2008
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
BALL DESCRIPTION
SYMBOL
CLK
CKE
CS
BA0, BA1
A0 ~ A13
RAS, CAS, WE
UDQM, LDQM
DQ0 ~ DQ15
VDD/VSS
VDDQ/VSSQ
NC
TYPE
DESCRIPTION
INPUT
Clock : The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
INPUT
Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will
be one of the states among (deep) power down, suspend or self refresh
INPUT Chip Select : Enables or disables all inputs except CLK, CKE, UDQM and LDQM
INPUT
Bank Address : Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
INPUT
Row Address : RA0 ~ RA13, Column Address : CA0 ~ CA9
Auto-precharge flag : A10
INPUT
Command Inputs : RAS, CAS and WE define the operation
Refer function truth table for details
INPUT
Data Mask : Controls output buffers in read mode and masks input data in write
mode
I/O Data Input/Output : Multiplexed data input/output pin
SUPPLY Power supply for internal circuits
SUPPLY Power supply for output buffers
- No connection
Rev 1.2 / Jul. 2008
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다운로드 | [ H55S1G62MFP-60.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
H55S1G62MFP-60 | 1Gb (64Mx16bit) Mobile SDRAM | Hynix Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |