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PDF H55S1G62MFP-75 Data sheet ( Hoja de datos )
| Número de pieza | H55S1G62MFP-75 | |
| Descripción | 1Gb (64Mx16bit) Mobile SDRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of
1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 16,777,216 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Jul. 2008
1
1 page  
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
FEATURES
Standard SDRAM Protocol
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write
for that bank is performed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Programmable burst length: 1, 2, 4, 8 or full page
Programmable Burst Type : sequential or interleaved
Programmable CAS latency of 2 or 3
Programmable Drive Strength
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
Operation Temperature
- -30oC ~ 85oC
Package
- 54 Ball Lead Free FBGA
1Gb SDRAM ORDERING INFORMATION
Part Number
H55S1G62MFP-60
H55S1G62MFP-75
H55S1G62MFP-A3
Clock Frequency
CAS
Latency
Organization
Interface Package
166MHz
3
133MHz
3 4banks x 16Mb x 16 LVCMOS 54 Ball FBGA
105MHz
3
Rev 1.2 / Jul. 2008
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
DC CHARACTERISTICS III - Low Power (IDD6)
Temp.
( oC)
45
85
4 Banks
450
900
Memory Array
2 Banks
350
650
1 Bank
300
500
Unit
uA
uA
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will
automatically adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.2 / Jul. 2008
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet H55S1G62MFP-75.PDF ] | |
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