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K4X1G163PC-LG 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K4X1G163PC-LG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K4X1G163PC-LG 자료 제공

부품번호 K4X1G163PC-LG 기능
기능 Mobile DDR SDRAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K4X1G163PC-LG 데이터시트, 핀배열, 회로
K4X1G163PC - L(F)E/G
Mobile DDR SDRAM
64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
MRS cycle with address key programs
- CAS Latency ( 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
• EMRS cycle with address key programs
- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
www.Da• DtaaStaheI/eOt4trUa.ncsoamctions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LMD, UMD for write masking only.
Auto refresh duty cycle
- 7.8us for -25 to 85 °C
2. Operating Frequency
Speed @CL21)
Speed @CL31)
NOTE:
1) CAS Latency
3. Address configuration
DDR333
83Mhz
166Mhz
DDR266
83Mhz
133Mhz
Organization
64Mx16
- DM is internally loaded to match DQ and DQS identically.
4. Ordering Information
Bank Address
BA0,BA1
Row Address
A0 - A13
Column Address
A0 - A9
Part No.
K4X1G163PC-L(F)E/GC6
K4X1G163PC-L(F)E/GC3
Max Freq.
166MHz(CL=3),83MHz(CL=2)
133MHz(CL=3),83MHz(CL=2)
- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)
- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)
- C6/C3 : 166MHz(CL=3) / 133MHz(CL=3)
Interface
LVCMOS
Package
60FBGA
Pb (Pb Free)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTH-
ING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY
INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"
BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in
loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
- 4 - November 2007




K4X1G163PC-LG pdf, 반도체, 판매, 대치품
K4X1G163PC - L(F)E/G
Mobile DDR SDRAM
7. Input/Output Function Description
Symbol
Type
Description
CK, CK
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the cross-
ing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buff-
ers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH
operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any banks). CKE is synchronous for all
functions except for disabling outputs, which is achieved asynchronously. Input buffers, excluding CK, CK and
CKE , are disabled during power-down and self refresh mode which are contrived for low standby power con-
sumption.
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command decoder.
CS Input All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems
with multiple banks. CS is considered part of the command code.
RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
www.DataSheet4U.com
LDM,UDM
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH
along with that input data during a WRITE access. DM is sampled on both edges of DQS. DM pins include
dummy loading internally, to matches the DQ and DQS loading. For the x16, LDM corresponds to the data on
DQ0-DQ7 ; UDM correspons to the data on DQ8-DQ15.
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE com-
mand is being applied.
A [n : 0]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and AUTO PRE-
CHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective
bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one
bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0,
BA1. The address inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1
determines which mode register( mode register or extended mode register ) is loaded during the MODE REG-
ISTER SET command.
DQ I/O Data Input/Output : Data bus
LDQS,UDQS
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data.
I/O it is used to fetch write data. For the x16, LDQS corresponds to the data on DQ0-DQ7 ; UDQS corresponds to
the data on DQ8-DQ15.
NC - No Connect : No internal electrical connection is present.
VDDQ
Supply DQ Power Supply : 1.7V to 1.95V
VSSQ
Supply DQ Ground.
VDD
Supply Power Supply : 1.7V to 1.95V
VSS
Supply Ground.
- 7 - November 2007

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K4X1G163PC-LG 전자부품, 판매, 대치품
K4X1G163PC - L(F)E/G
Mobile DDR SDRAM
Burst
Length
Starting
Address
(A3, A2, A1, A0)
xxx0
2
xxx1
xx00
xx01
4
xx10
xx11
x000
x001
www.DataSheet4U.com x010
x011
8
x100
x101
x110
x111
0000
0001
0010
0011
0100
0101
0110
0111
16
1000
1001
1010
1011
1100
1101
1110
1111
Table 1. Burst address ordering for burst length
Sequential Mode
Interleave Mode
0, 1
1, 0
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1, 2
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 0, 1, 2, 3, 4
6, 7, 0, 1, 2, 3, 4, 5
7, 0, 1, 2, 3, 4, 5, 6
0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15
1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0
2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1
3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2
4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3
5, 6, 7,8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4
6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5
7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6
8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7
9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7, 8
10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9
11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10
12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11
13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11,12
14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13
15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14
0, 1
1, 0
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15
1, 0, 3, 2, 5, 4, 7, 6, 9, 8, 11,10,13,12,15,14
2, 3, 0, 1, 6, 7, 4, 5,10,11, 8, 9, 14,15,12,13
3, 2, 1, 0, 7, 6, 5, 4,11,10, 9, 8, 15,14,13,12
4, 5, 6, 7, 0, 1, 2, 3,12,13,14,15, 8, 9, 10,11
5, 4, 7, 6, 1, 0, 3, 2,13,12,15,14, 9, 8,11,10
6, 7, 4, 5, 2, 3, 0, 1,14,15,12,13,10,11, 8, 9
7, 6, 5, 4, 3, 2, 1, 0, 15,14,13,12,11,10, 9, 8
8, 9,10,11,12,13,14,15, 0, 1, 2, 3, 4, 5, 6, 7
9, 8, 11,10,13,12,15,14,1, 0, 3, 2, 5, 4, 7, 6
10,11, 8, 9, 14,15,12,13, 2, 3, 0, 1, 6, 7, 4, 5
11,10, 9, 8, 15,14,13,12, 3, 2, 1, 0, 7, 6, 5, 4
12,13,14,15, 8, 9, 10,11, 4, 5, 6, 7, 0, 1, 2, 3
13,12,15,14, 9, 8,11,10, 5, 4, 7, 6, 1, 0, 3, 2
14,15,12,13,10,11, 8, 9, 6, 7, 4, 5, 2, 3, 0, 1
15,14,13,12,11,10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0
- 10 -
November 2007

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K4X1G163PC-LE

Mobile DDR SDRAM

Samsung semiconductor
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K4X1G163PC-LG

Mobile DDR SDRAM

Samsung semiconductor
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