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3MBI150U-120 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 3MBI150U-120
기능 1200V / 150A 3 in one-package
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3MBI150U-120 데이터시트, 핀배열, 회로
3MBI150U-120
IGBT Module U-Series 1200V / 150A 3 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
www.DataSheet4U.com
Symbol
VCES
VGES
IC
ICp
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *2
-IC
-IC pulse
PC
Tj
Tstg
Viso
1 device
AC:1min.
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=150A
VGE=±15V
RG=2.2
VGE=0V
IF=150A
IF=150A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*3:Biggest internal terminal resistance among arm.
Characteristics
Min.
Typ.
––
––
4.5 6.5
– 2.15
– 2.40
– 1.75
– 2.00
– 17
– 0.36
– 0.21
– 0.03
– 0.37
– 0.07
– 2.00
– 2.10
– 1.60
– 1.70
––
– 2.4
Max.
1.0
200
8.5
2.50
2.10
1.20
0.60
1.00
0.30
2.30
1.90
0.35
Unit
V
V
A
W
°C
VAC
N·m
Unit
mA
nA
V
V
nF
µs
V
µs
m
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
FWD
With thermal compound
Min.
Typ.
0.05
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.17
0.28
Unit
°C/W
°C/W
°C/W




3MBI150U-120 pdf, 반도체, 판매, 대치품
3MBI150U-120
Forward current vs. Forward on voltage (typ.)
chip
400
350
Tj=25°C
300
250
200
Tj=125°C
150
100
50
www.DataSheet4U.c0om
0
123
Forward on voltage : VF [ V ]
4
IGBT Module
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=2.2
1000
trr (125°C)
Irr (125°C)
100
Irr (25°C)
trr (25°C)
10
0
100 200
Forward current : IF [ A ]
300
1.000
0.100
Transient thermal resistance (max.)
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000

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부품번호상세설명 및 기능제조사
3MBI150U-120

1200V / 150A 3 in one-package

Fuji Electric
Fuji Electric

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