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Número de pieza | AO4912 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4912 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4912 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS &
www.DaStaoSnhye2e5t94Us.pceocmifications). AO4912L is a Green Product
ordering option. AO4912 and AO4912L are electrically
identical.
Features
Q1
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ
RDS(ON) < 25mΩ
Q2
VDS(V) = 30V
ID=7A (VGS = 10V)
<26mΩ (VGS = 10V)
<31mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1 D2
D2 1 8 G2
D2 2 7 D1/S2/K
G1 3 6 D1/S2/K
S1/A 4 5 D1/S2/K
SOIC-8
K
Q1 Q2
G1 A
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
30
±20
8.5
6.8
40
2
1.28
-55 to 150
Max Q2
30
±12
7
6.4
30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Diode Forward Current B
Power Dissipation A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
IF
IFM
PD
TJ, TSTG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
4 ID=7A
3
750
500
2
250
1
0
012345
Qg (nC)
www.DataSheet4U.comFigure 7: Gate-Charge Characteristics
6
0
0
f=1MHz
Ciss VGS=0V
Coss
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
10.0
RDS(ON) TJ(Max)=150°C, TA=25°C
limited
1ms 100µs
10µs
10ms
0.1s
1.0 1s
0.1
0.1
10s
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
30 TA=25°C
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
PD
Single Pulse
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet AO4912.PDF ] |
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