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PDF AO4918A Data sheet ( Hoja de datos )
| Número de pieza | AO4918A | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4918A
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4918A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
www.DataSheet4U.com
parallel with the synchronous MOSFET to boost
efficiency further. AO4918A is Pb-free (meets ROHS
& Sony 259 specifications). AO4918AL is a Green
Product ordering option. AO4918A and AO4918AL
are electrically identical.
Features
Q1
VDS (V) = 30V
ID = 9.3A
RDS(ON) < 14.5mΩ
RDS(ON) < 16mΩ
Q2
VDS(V) = 30V
ID=8.5A
<18mΩ
(VGS = 10V)
<27mΩ
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1 D2
D2 1 8 G2
D2 2 7 D1/S2/K
G1 3 6 D1/S2/K
S1/A 4 5 D1/S2/K
SOIC-8
K
Q1 Q2
A
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1 Max Q2
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
VGS ±12 ±20
9.3 8.5
ID 7.4 6.7
IDM 40 30
TA=25°C
Power Dissipation TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
2
1.28
-55 to 150
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Diode Forward CurrentB
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
IF
IFM
PD
TJ, TSTG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4918A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
4 ID=9.3A
10000
f=1MHz
Ciss VGS=0V
3
1000
2
1
0
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
www.DataSheet4U.com
35
100
0
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
10.0
RDS(ON)
limited
TJ(Max)=150°C, TA=25°C
1ms 100µs
10µs
10ms
0.1s
1.0 1s
10s
0.1
0.1
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
J8u.n5ction-to-
Ambient (Note E)
30
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
1
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4918A.PDF ] | |
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