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PDF AO4922 Data sheet ( Hoja de datos )
| Número de pieza | AO4922 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4922
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AO4922 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
www.DadtaioSdheeeint4pUa.croamllel with the synchronous MOSFET to
boost efficiency further. Standard Product AO4922 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4922L is a Green Product ordering option.
AO4922L and AO4922 are electrically identical.
Features
FET1
VDS (V) = 30V
ID = 9A
RDS(ON) < 15.8mΩ
RDS(ON) < 18.5mΩ
FET2
VDS(V) = 30V
I D=7.3A (VGS = 10V)
<24mΩ (VGS = 10V)
<29mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max FET1 Max FET2
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±12 ±12
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
9.0 7.3
7.2 5.9
40 40
22 12
73 22
Power DissipationA
TA=25°C
TA=70°C
PDSM
2.0 2.0
1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150
Thermal Characteristics FET1
Parameter
Symbol Typ Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
48 62.5
74 90
Maximum Junction-to-Lead C
Steady-State
RθJL
32
40
Thermal Characteristics FET2
Parameter
Symbol Typ Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
48 62.5
74 90
Maximum Junction-to-Lead C
Steady-State
RθJL
32
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
www.DataShe1e.0tE4U-0.6com
0 50 100 150 200
Temperature (°C)
DYNAMIC PAFRigAurMe 1E2T: EDRiodSe Reverse Leakage Current vs.
Junction Temperature
25
di/dt=800A/us
125ºC
20
15 Qrr
10 Irm
5
125ºC
25ºC
25ºC
8
6
4
2
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9
0.8 20A
0.7
0.6
0.5 10A
0.4 5A
0.3
0.2
0.1 IS=1A
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15 2.5
di/dt=800A/us
12
125ºC
2
9
trr
6
S
3
25ºC
25º
125ºC
1.5
1
0.5
00
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25
20
15
10
5 Qrr
0 Irm
0 200
Is=20A
400 600
10
125ºC 9
8
25ºC 7
6
125º
5
4
25ºC
3
2
1
0
800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
18
15 125ºC
12 25ºC
Is=20A
3
2.5
2
9
6 25ºC
trr 1.5
1
3 125ºC
S 0.5
00
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4922.PDF ] | |
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