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PDF AO4924 Data sheet ( Hoja de datos )
| Número de pieza | AO4924 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4924
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AO4924 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
www.DaptaaSrhaelleelt4wUi.tchotmhe synchronous MOSFET to boost
efficiency further. Standard Product AO4924 is Pb-free
(meets ROHS & Sony 259 specifications). AO4924L is
a Green Product ordering option. AO4924L and AO4924
are electrically identical.
Features
FET1
VDS (V) = 30V
ID = 9A
RDS(ON) < 15.8mΩ
RDS(ON) < 19.5mΩ
FET2
VDS(V) = 30V
I D=7.3A
(VGS = 10V)
<24mΩ
(VGS = 10V)
<29mΩ
(VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
S1 1 8 D1
G1 2 7 D1
S2 3 6 D2
G2 4 5 D2
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
9.0
7.2
40
16
38
Power Dissipation
TA=25°C
TA=70°C
PDSM
2.0
1.3
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Max FET2
30
±12
7.3
5.9
40
12
22
2.0
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°C
Typ Max Units
48 62.5 °C/W
74 90 °C/W
32 40 °C/W
Typ Max Units
48 62.5 °C/W
74 90 °C/W
32 40 °C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
1.0E-06
0 50 100 150 200
www.DataSheet4U.com
Temperature (°C)
DYNAMIC PAFRigAuMreE1T2:EDRioSde Reverse Leakage Current vs.
Junction Temperature
30
di/dt=800A/us
25
125ºC
12
10
20
15
Qrr
10
Irm
5
25ºC
125ºC
25ºC
8
6
4
2
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9 20A
0.8
0.7
0.6
0.5 10A
0.4 5A
0.3
0.2
0.1 IS=1A
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
12
10 di/dt=800A/us
125ºC
3
2.5
8
trr
6
25ºC
2
1.5
4
2S
125ºC
1
0.5
25ºC
00
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25 10
20
Is=20A
125ºC
8
15 6
25ºC
10
125º
4
5 Qrr
25ºC
2
0 Irm
0
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
15
125ºC
12
25ºC
9
6 25ºC
Is=20A
2.5
2
1.5
trr
1
3 125ºC
S 0.5
00
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4924.PDF ] | |
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