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PDF AUIRF1010EZL Data sheet ( Hoja de datos )

Número de pieza AUIRF1010EZL
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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AUTOMOTIVE GRADE
PD - 95962
AUIRF1010EZ
AUIRF1010EZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
G
AUIRF1010EZL
HEXFET® Power MOSFET
D V(BR)DSS
60V
RDS(on) max.
8.5m
ID (Silicon Limited)
S ID (Package Limited)
84A
75A
www.DataSheetD4Ue.sccormiption
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
cations.
Absolute Maximum Ratings
D
D
D
DS
G
DS
G
TO-220AB
D2Pak
AUIRF1010EZ AUIRF1010EZS
G
Gate
D
Drain
GD S
TO-262
AUIRF1010EZL
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
84
60
75
A
340
140 W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
0.90
± 20
99
180
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
kRθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/23/10

1 page




AUIRF1010EZL pdf
AUIRF1010EZ/S/L
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
www.DataSheet4U.com
1000
100
1
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
10.0
ID= 51A
8.0
VDS= 48V
VDS= 30V
VDS= 12V
6.0
4.0
2.0
0.0
0
10 20 30 40 50
QG Total Gate Charge (nC)
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
ance
1000.00
100.00
10.00 TJ = 175°C
1.00
TJ = 25°C
VGS = 0V
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
1msec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5

5 Page





AUIRF1010EZL arduino
AUIRF1010EZ/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
www.DataSheet4U.com
D2Pak Part Marking Information
Part Number
IR Logo
AUF1010EZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
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