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PDF AUIRF1404ZL Data sheet ( Hoja de datos )

Número de pieza AUIRF1404ZL
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRF1404ZL Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD - 97460
AUIRF1404Z
AUIRF1404ZS
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
AUIRF1404ZL
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
ID (Silicon Limited)
S ID (Package Limited)
40V
3.7m
n180A
160A
Description
Specifically designed for Automotive applications,
www.DataSheett4hUis.cHoEmXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D DD
DS
G
DS
G
TO-220AB
AUIRF1404Z
D2Pak
AUIRF1404ZS
DS
G
TO-262
AUIRF1404ZL
GD S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
EAS
EAS (tested )
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
iSoldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
lJunction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
Max.
n180
120
160
710
200
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
y y300
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
k0.75
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010

1 page




AUIRF1404ZL pdf
AUIRF1404Z/S/L
8000
6000
4000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
www.DataSheet4U.com
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
20
ID= 75A
16
VDS= 32V
VDS= 20V
12
8
4
0
0 40 80 120 160
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
ance
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4
VSD, Source-toDrain Voltage (V)
1.8
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
Tc = 25°C
Tj = 175°C
1 Single Pulse
01
1msec
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5

5 Page





AUIRF1404ZL arduino
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRF1404Z/S/L
www.DataSheet4U.com
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRF1404ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
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