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부품번호 | LP2997 기능 |
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기능 | DDR-II Termination Regulator | ||
제조업체 | National Semiconductor | ||
로고 | ![]() |
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전체 12 페이지수
![]() June 2004
LP2997
DDR-II Termination Regulator
General Description
The LP2997 linear regulator is designed to meet the JEDEC
SSTL-18 specifications for termination of DDR-II memory.
The device contains a high-speed operational amplifier to
provide excellent response to load transients. The output
stage prevents shoot through while delivering 500mA con-
tinuous current and transient peaks up to 900mA in the
application as required for DDR-II SDRAM termination. The
LP2997 also incorporates a VSENSE pin to provide superior
load regulation and a VREF output as a reference for the
chipset and DIMMs.
An additional feature found on the LP2997 is an active low
shutdown (SD) pin that provides Suspend To RAM (STR)
functionality. When SD is pulled low the VTT output will
tri-state providing a high impedance output, but, VREF will
remain active. A power savings advantage can be obtained
in this mode through lower quiescent current.
Features
n Source and sink current
n Low output voltage offset
n No external resistors required
n Linear topology
n Suspend to Ram (STR) functionality
n Low external component count
n Thermal Shutdown
n Available in SO-8, PSOP-8 packages
Applications
n DDR-II Termination Voltage
n SSTL-18 Termination
Typical Application Circuit
20109418
© 2004 National Semiconductor Corporation DS201094
www.national.com
![]() ![]() Electrical Characteristics Specifications with standard typeface are for TJ = 25˚C and limits in boldface type
apply over the full Operating Temperature Range (TJ = 0˚C to +125˚C) (Note 4). Unless otherwise specified,
AVIN = 2.5V, PVIN = 1.8V, VDDQ = 1.8V. (Continued)
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating range indicates conditions for which the device is
intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and test conditions see Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed
test conditions.
Note 2: The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin.
Note 3: At elevated temperatures, devices must be derated based on thermal resistance. The device in the SO-8 package must be derated at θJA = 151.2˚ C/W
junction to ambient with no heat sink.
Note 4: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 5: Quiescent current defined as the current flow into AVIN.
Note 6: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction to ambient thermal resistance, θJA, and
the ambient temperature, TA. Exceeding the maximum allowable power dissipation will cause excessive die temperature and the regulator will go into thermal
shutdown.
Note 7: VTT load regulation is tested by using a 10 ms current pulse and measuring VTT.
www.national.com
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4페이지 ![]() ![]() Block Diagram
Description
The LP2997 is a linear bus termination regulator designed to
meet the JEDEC requirements of SSTL-18. The output, VTT
is capable of sinking and sourcing current while regulating
the output voltage equal to VDDQ / 2. The output stage has
been designed to maintain excellent load regulation while
preventing shoot through. The LP2997 also incorporates two
distinct power rails that separates the analog circuitry from
the power output stage. This allows a split rail approach to
be utilized to decrease internal power dissipation. It also
permits the LP2997 to provide a termination solution for the
next generation of DDR-SDRAM memory (DDRII).
Pin Descriptions
AVIN AND PVIN
AVIN and PVIN are the input supply pins for the LP2997.
AVIN is used to supply all the internal control circuitry. PVIN,
however, is used exclusively to provide the rail voltage for
the output stage used to create VTT. These pins have the
capability to work off separate supplies, under the condition
that AVIN is always greater than or equal to PVIN. For
SSTL-18 applications, it is recommended to connect PVIN to
the 1.8V rail used for the memory core and AVIN to a rail
within its operating range of 2.2V to 5.5V (typically a 2.5V
supply). PVIN should always be used with either a 1.8V or
2.5V rail. This prevents the thermal limit from tripping be-
cause of excessive internal power dissipation. If the junction
temperature exceeds the thermal shutdown than the part will
enter a shutdown state identical to the manual shutdown
where VTT is tri-stated and VREF remains active. A lower rail
such as 1.5V can be used but it will reduce the maximum
output current, therefore it is not recommended for most
termination schemes.
VDDQ
VDDQ is the input used to create the internal reference
voltage for regulating VTT. The reference voltage is gener-
ated from a resistor divider of two internal 50kΩ resistors.
This guarantees that VTT will track VDDQ / 2 precisely. The
optimal implementation of VDDQ is as a remote sense. This
can be achieved by connecting VDDQ directly to the 1.8V
rail at the DIMM instead of PVIN. This ensures that the
reference voltage tracks the DDR memory rails precisely
without a large voltage drop from the power lines. For
SSTL-18 applications VDDQ will be a 1.8V signal, which will
20109405
create a 0.9V termination voltage at VTT (See Electrical
Characteristics Table for exact values of VTT over tempera-
ture).
VSENSE
The purpose of the sense pin is to provide improved remote
load regulation. In most motherboard applications the termi-
nation resistors will connect to VTT in a long plane. If the
output voltage was regulated only at the output of the
LP2997 then the long trace will cause a significant IR drop
resulting in a termination voltage lower at one end of the bus
than the other. The VSENSE pin can be used to improve this
performance, by connecting it to the middle of the bus. This
will provide a better distribution across the entire termination
bus. If remote load regulation is not used then the VSENSE
pin must still be connected to VTT. Care should be taken
when a long VSENSE trace is implemented in close proximity
to the memory. Noise pickup in the VSENSE trace can cause
problems with precise regulation of VTT. A small 0.1uF ce-
ramic capacitor placed next to the VSENSE pin can help filter
any high frequency signals and preventing errors.
SHUTDOWN
The LP2997 contains an active low shutdown pin that can be
used for suspend to RAM functionality. In this condition the
VTT output will tri-state while the VREF output remains active
providing a constant reference signal for the memory and
chipset. During shutdown VTT should not be exposed to
voltages that exceed PVIN. With the shutdown pin asserted
low the quiescent current of the LP2997 will drop, however,
VDDQ will always maintain its constant impedance of 100kΩ
for generating the internal reference. Therefore, to calculate
the total power loss in shutdown both currents need to be
considered. For more information refer to the Thermal Dis-
sipation section. The shutdown pin also has an internal
pull-up current; therefore, to turn the part on the shutdown
pin can either be connected to AVIN or left open
VREF
VREF provides the buffered output of the internal reference
voltage VDDQ / 2. This output should be used to provide the
reference voltage for the Northbridge chipset and memory.
Since these inputs are typically an extremely high imped-
ance, there should be little current drawn from VREF. For
improved performance, an output bypass capacitor can be
used, located close to the pin, to help with noise. A ceramic
capacitor in the range of 0.1 µF to 0.01 µF is recommended.
7 www.national.com
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다운로드 | [ LP2997.PDF 데이터시트 ] |
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