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부품번호 | R1EX25004ASA00A 기능 |
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기능 | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 22 페이지수
R1EX25002ASA00A/R1EX25004ASA00A
R1EX25002ATA00A/R1EX25004ATA00A
Serial Peripheral Interface
2k EEPROM (256-word × 8-bit)
4k EEPROM (512-word × 8-bit)
Electrically Erasable and Programmable Read Only Memory
REJ03C0357-0001
Preliminary
Rev.0.01
Jan.25.2008
Description
www.DaRt1aEShXe2e5tx4xUx.cSomeries is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 16-byte
page programming function to make it’s write operation faster.
Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as cellular phones,
camcorders, audio equipments. Therefore, please contact Renesas Technology’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
• Single supply: 1.8 V to 5.5 V
• Serial Peripheral Interface compatible (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
Standby: 2µA (max)
Active (Read): 2 mA (max)
Active (Write): 2.5 mA (max)
• Automatic page write: 16-byte/page
• Write cycle time: 5 ms
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin, TSSOP-8pin
• Shipping tape and reel
TSSOP-8pin: 3,000 IC/reel
SOP-8pin
: 2,500 IC/reel
• Temperature range: −40 to +85 °C
• Lead free product.
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications
REJ03C0357-0001 Rev.0.01 Jan.25.2008
page 1 of 20
R1EX25002Axx00A/R1EX25004Axx00A
DC Characteristics
Parameter
Input leakage current
Symbol
ILI
Output leakage current
ILO
VCC current
Standby
ISB
Active
ICC1
Min
Output voltage
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ICC2
VOL1
VOL2
VOH1
VOH2
VCC × 0.8
VCC × 0.8
Max
2
2
2
2
2.5
0.4
0.4
Unit
µA
µA
µA
mA
mA
V
V
V
V
Test conditions
VCC = 5.5 V, VIN = 0 to 5.5 V
(S, D, C, HOLD, W)
VCC = 5.5 V, VOUT = 0 to 5.5 V
(Q)
VIN = VSS or VCC,
VCC = 5.5 V
VCC = 5.5 V, Read at 5 MHz
VIN = VCC × 0.1/VCC × 0.9
Q = OPEN
VCC = 5.5 V, Write at 5 MHz
VIN = VCC × 0.1/VCC × 0.9
VCC = 5.5 V, IOL = 2 mA
VCC = 2.5 V, IOL = 1.5 mA
VCC = 5.5 V, IOL = −2 mA
VCC = 2.5 V, IOL = −0.4 mA
REJ03C0357-0001 Rev. 0.01 Jan.25.2008
page 4 of 20
4페이지 R1EX25002Axx00A/R1EX25004Axx00A
Timing Waveforms
Serial Input Timing
S
tCHSL
tSLCH
C
tDVCH
tCHDX
D MSB IN
Q
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Hold Timing
S
C
High Impedance
tCHHL
tHLCH
D
Q
HOLD
tHLQZ
tSHSL
tCHSH
tSHCH
tCLCH
tCHCL
LSB IN
tHHCH
tCHHH
tHHQX
Output Timing
S
C
D
ADDR
LSB IN
tCLQV
tCLQX
Q
tCH
tCL
tCLQX
tCLQV
REJ03C0357-0001 Rev. 0.01 Jan.25.2008
page 7 of 20
tSHQZ
LSB OUT
ttQQLHQQHL
7페이지 | |||
구 성 | 총 22 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
R1EX25004ASA00A | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | Renesas Technology |
R1EX25004ASA00I | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |