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부품번호 | R1EX25002ASA00I 기능 |
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기능 | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 22 페이지수
R1EX25002ASA00I/R1EX25004ASA00I
R1EX25002ATA00I/R1EX25004ATA00I
Serial Peripheral Interface
2k EEPROM (256-word × 8-bit)
4k EEPROM (512-word × 8-bit)
Electrically Erasable and Programmable Read Only Memory
REJ03C0361-0001
Preliminary
Rev.0.01
Feb.21.2008
Description
www.DaRt1aEShXe2e5tx4xUx.cSomeries is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 16-byte
page programming function to make it’s write operation faster.
.
Features
• Single supply: 1.8 V to 5.5 V
• Serial Peripheral Interface compatible (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
• Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
• Power dissipation:
Standby: 2µA (max)
Active (Read): 2 mA (max)
Active (Write): 2.5 mA (max)
• Automatic page write: 16-byte/page
• Write cycle time: 5 ms
• Endurance: 106 Erase/Write Cycles
• Data retention: 10 Years
• Small size packages: SOP-8pin, TSSOP-8pin
• Shipping tape and reel
TSSOP-8pin: 3,000 IC/reel
SOP-8pin : 2,500 IC/reel
• Temperature range: −40 to +85 °C
• Lead free product.
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications
REJ03C0361-0001 Rev.0.01 Feb.21.2008
page 1 of 20
R1EX25002Axx00I/R1EX25004Axx00I
DC Characteristics
Parameter
Input leakage current
Symbol
ILI
Output leakage current
ILO
VCC current
Standby
ISB
Active
ICC1
Min
Output voltage
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ICC2
VOL1
VOL2
VOH1
VOH2
VCC × 0.8
VCC × 0.8
Max
2
2
2
2
2.5
0.4
0.4
Unit
µA
µA
µA
mA
mA
V
V
V
V
Test conditions
VCC = 5.5 V, VIN = 0 to 5.5 V
(S, D, C, HOLD, W)
VCC = 5.5 V, VOUT = 0 to 5.5 V
(Q)
VIN = VSS or VCC,
VCC = 5.5 V
VCC = 5.5 V, Read at 5 MHz
VIN = VCC × 0.1/VCC × 0.9
Q = OPEN
VCC = 5.5 V, Write at 5 MHz
VIN = VCC × 0.1/VCC × 0.9
VCC = 5.5 V, IOL = 2 mA
VCC = 2.5 V, IOL = 1.5 mA
VCC = 5.5 V, IOL = −2 mA
VCC = 2.5 V, IOL = −0.4 mA
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 4 of 20
4페이지 R1EX25002Axx00I/R1EX25004Axx00I
Timing Waveforms
Serial Input Timing
S
tCHSL
tSLCH
C
tDVCH
tCHDX
D MSB IN
Q
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Hold Timing
S
C
High Impedance
tCHHL
tHLCH
D
Q
HOLD
tHLQZ
tSHSL
tCHSH
tSHCH
tCLCH
tCHCL
LSB IN
tHHCH
tCHHH
tHHQX
Output Timing
S
C
D
ADDR
LSB IN
tCLQV
tCLQX
Q
tCH
tCL
tCLQX
tCLQV
REJ03C0361-0001 Rev.0.01 Feb.25.2008
page 7 of 20
tSHQZ
LSB OUT
ttQQLHQQHL
7페이지 | |||
구 성 | 총 22 페이지수 | ||
다운로드 | [ R1EX25002ASA00I.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
R1EX25002ASA00A | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | Renesas Technology |
R1EX25002ASA00I | Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory | Renesas Technology |
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