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PDF H557 Data sheet ( Hoja de datos )
| Número de pieza | H557 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H557 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H557
APPLICATIONS
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
www.DataSPheCet4U.comCollector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter- Base Voltage
IC Collector Current
-55~150
150
500mW
-50V
-45V
-5V
-100mA
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON1)
VBE(ON2)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
IC=-100 A, IE=0
IC=-10mA, IB=0
IE=-100 A IC=0
VCB=-30V, IE=0
VCE=-5V, IC=-2mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=- 5V, IC=- 10mA, f=1MHz
VCB=-10V, IE=0,f=1MHz
hFE Classification
A
110 220
B
200 450
C
420 800
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet H557.PDF ] | |
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