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PDF ARF473 Data sheet ( Hoja de datos )

Número de pieza ARF473
Descripción N-channel Enhancement MODE Power MOSFETs
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! ARF473 Hoja de datos, Descripción, Manual

Common Source
Push-Pull Pair
ARF473
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
D
G
ARF473
S
G (Flange)
D
165 V 300 W 150 MHz
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 135 Volt, 130 MHz Characteristics:
High Performance Push-Pull RF Package.
Output Power = 300 Watts.
High Voltage Breakdown and Large SOA
Gain = 13dB (Class AB)
www.DataSheet4UE.cffoimciency = 50%
for Superior Ruggedness.
Low Thermal Resistance.
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
ARF473
UNIT
VDSS
ID
VGS
PD
TJ,TSTG
TL
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
(each device)
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
500
10
±30
500
-55 to 200
300
Volts
Amps
Volts
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
VDS(ON)
IDSS
IGSS
gfs
gfs1/ gfs2
VGS(TH)
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Voltage 1 (ID(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 5A)
Forward Transconductance Match Ratio (VDS = 25V, ID = 5A)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
Gate Threshold Voltage Match (VDS = VGS, ID = 200mA)
MIN TYP MAX UNIT
500
4 Volts
25
250 µA
±100 nA
46
mhos
0.9 1.1
35
0.1 Volts
THERMAL CHARACTERISTICS
Symbol
RθJC
RθCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP MAX
0.35
0.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
°C/W

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