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PDF ARF477FL Data sheet ( Hoja de datos )
| Número de pieza | ARF477FL | |
| Descripción | POWER MOSFET N-CHANNEL PUSH - PULL PAIR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ARF477FL (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
ARF477FLCommon Source
Push-Pull Pair
D
G
SS
SS
G
D
ARF477FL
165V 400W 100MHz
The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high
voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz.
• Specified 150 Volt, 65 MHz Characteristics:
• High Performance Push-Pull RF Package.
• Output Power = 400 Watts
•www.DataSheet4UG.caoinm= 15dB (Class AB)
• Efficiency = 50% min
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Low Thermal Resistance.
• RoHS Compliant
MAXIMUM RATINGS
Symbol
VDSS
VDGO
ID
VGS
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C (each device)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
Ratings
500
500
15
±30
750
-55 to 175
300
Unit
V
A
V
W
°C
Static Electrical Characteristics
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
gfs1/gfa2
VGS(TH)
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 15V, ID = 7.5A)
Forward Transconductance Match Ratio (VDS = 15V, ID = 5A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
Gate Threshold Voltage Match (VDS = VGS, ID = 50mA)
Min Typ Max
500
2.9 4
25
250
±100
3.5 5.6
8
0.9 1.1
35
0.2
Thermal Characteristics
Symbol
RθJC
RθJHS
Parameter
Junction to Case
Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
Min
Typ
0.18
0.30
Max
0.2
0.32
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
V
μA
nA
mhos
Volts
Unit
°C/W
Microsemi Website - http://www.microsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ARF477FL.PDF ] | |
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