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PDF MW6S010GNR1 Data sheet ( Hoja de datos )
| Número de pieza | MW6S010GNR1 | |
| Descripción | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
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Feedback for Broadband Stability
to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010N
Rev. 3, 5/2006
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MW6S010NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1
1 page  
TYPICAL CHARACTERISTICS — 900 MHz
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−8
48 ηD
− 10
44
40 IRL
36
32
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
28
24 IMD
20 Gps
16
− 12
− 14
− 16
− 18
− 20
− 22
− 24
− 26
910 920 930 940 950 960 970
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ Pout = 10 Watts
20
IDQ = 190 mA
19
125 mA
18 90 mA
17
16 VDD = 28 Vdc, f = 945 MHz
Two−Tone Measurements
100 kHz Tone Spacing
15
0.1 1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Two - Tone Power Gain versus
Output Power
100
− 10
VDD = 28 Vdc, IDQ = 125 mA
− 20
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
− 30
3rd Order
5th Order
− 40
7th Order
− 50
− 60
− 70
0.1 1 10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
− 15
VDD = 28 Vdc, Pout = 10 W (Avg.)
−20 IDQ = 125 mA, Two−Tone Measurements
(f1+f2)/2 = Center Frequency = 945 MHz
− 25
− 30
−35 3rd Order
− 40
−45 5th Order
−50 7th Order
− 55
0.1 1 10 100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
48
46 P3dB = 43.14 dBm (20.61 W)
Ideal
44 P1dB = 42.23 dBm (16.71 W)
42
Actual
40 VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 945 MHz
38
19 21 23 25 27 29
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1
5
5 Page 
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TYPICAL CHARACTERISTICS — 450 MHz
20.4 37
20.2 Gps
20
34
31
19.8 ηD
19.6
19.4
19.2
19
18.8
18.6 ALT1
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ACPR
IRL
28
25
−40 −6
−45 −9
−50 −12
−55 −15
−60 −18
18.4 −65
400 410 420 430 440 450 460 470 480 490 500
− 21
f, FREQUENCY (MHz)
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
19 55
18.8 Gps 50
18.5
ηD
18.3
18
17.8
17.5
17.3
17
16.8 ALT1
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ACPR
IRL
45
40
35
−30 −4
−35 −6
−40 −8
−45 −10
−50 −12
16.5 −55
400 410 420 430 440 450 460 470 480 490 500
− 14
f, FREQUENCY (MHz)
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
30 0
25
S11
20
S21
15
−5
− 10
− 15
10 VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
− 20
5 −25
50 100 150 200 250 300 350 400 450 500 550 600 650
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
− 10
− 20
− 30
ACPR
− 40
ALT1 −50
ALT2 −60
− 70
− 80
0.1 1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Single - Carrier N - CDMA ACPR, ALT1
and ALT2 versus Output Power
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
11
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