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PDF APT22M100JCU3 Data sheet ( Hoja de datos )
| Número de pieza | APT22M100JCU3 | |
| Descripción | ISOTOP Buck chopper MOSFET SiC chopper diode Power module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APT22M100JCU3
ISOTOP® Buck chopper
MOSFET + SiC chopper diode
Power module
D
G
www.DataSheet4U.com
S
A
S
G
A
D
ISOTOP®
VDSS = 1000V
RDSon = 400mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
22
17
120
±30
480
463
16
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APT22M100JCU3
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.8
1.6 0.9
1.4
1.2 0.7
1 0.5
0.8
0.6 0.3
0.4
0.1
0.2
0.05
0
Single Pulse
www.DataSheet4U0..0c0o0m01
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
10
Forward Characteristics
20
TJ=25°C
16
TJ=75°C
12
8 TJ=125°C
4
TJ=175°C
0
0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V)
Reverse Characteristics
100
75
50 TJ=75°C
25
0
400
TJ=125°C
TJ=175°C
TJ=25°C
600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
700
600
500
400
300
200
100
0
1 10 100 1000
VR Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| PDF Descargar | [ Datasheet APT22M100JCU3.PDF ] | |
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