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부품번호 | FQPF11N50CF 기능 |
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기능 | 500V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQPF11N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 11 A, 550 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
• 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V,
ID = 5.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQPF11N50CF
500
11*
7*
44*
± 30
670
11
19.5
4.5
48
0.39
-55 to +150
300
FQPF11N50CF
2.58
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
©2005 Fairchild Semiconductor Corporation
FQPF11N50CF Rev. C1
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2 3.0
2.5
1.1
2.0
1.0 1.5
0.9 * Notes :
1. VGS = 0 V
2. ID = 250µA
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [°C]
200
Figure 9. Maximum Safe Operating Area
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
100
10-1
10-2
100
10 µs
100 µs
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
12
10
8
6
4
2
0
25 50 75 100 125 150
TJ, Junction Temperature [oC]
Figure 11. Transient Thermal Response Curve
D = 0 .5
100
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
sin g le p u s e
PDM
t1
t2
* N otes :
1 . Z θJC(t) = 2 .5 8 oC /W M a x .
2 . D u ty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
©2005 Fairchild Semiconductor Corporation
FQPF11N50CF Rev. C1
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2005 Fairchild Semiconductor Corporation
FQPF11N50CF Rev. C1
7
www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQPF11N50CF | 500V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |