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PDF MRFG35003N6T1 Data sheet ( Hoja de datos )
| Número de pieza | MRFG35003N6T1 | |
| Descripción | POWER FET GaAs PHEMT | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
www.Dat•aShIneeTta4pUe.caonmd Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35003N6
Rev. 5, 1/2006
MRFG35003N6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
PD
8
22.7 (2)
0.15 (2)
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VGS
-5
Pin 24
Tstg - 65 to +150
Tch 175
TC - 20 to +85
Characteristic
Symbol
Value
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
6.6 (2)
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
260
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003N6T1
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
0
IRL
−10
0
−10
−20
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
−30 ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_
−40
ACPR
−50
−20
−30
−40
−50
−60
0.1
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
−60
1
12 40
11.5 35
11 30
10.5 GT
10
25
20
9.5 15
PAE
9
8.5
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_
10
5
80
0.1 1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35003N6T1
5
5 Page 
PACKAGE DIMENSIONS
A 0.146
3.71
F
0.095
2.41
3 0.115
2.92
BD
1
2R
L
0.115
2.92
4
N
K
Q
www.DataSheet4U.com
ZONE V
H
ZONEW ÉÉÉÉÉ1 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ4 ÉÉÉÉÉÉÉÉÉÉ2
3
G
S
ZONE X
VIEW Y - Y
0.020
0.51
0.35 (0.89) X 45_" 5_
10_DRAFT
inches
mm
SOLDER FOOTPRINT
U
C
P
Y
YE
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
CASE 466 - 03
ISSUE D
PLD - 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN MAX
0.255 0.265
0.225 0.235
0.065 0.072
0.130 0.150
0.021 0.026
0.026 0.044
0.050 0.070
0.045 0.063
0.160 0.180
0.273 0.285
0.245 0.255
0.230 0.240
0.000 0.008
0.055 0.063
0.200 0.210
0.006 0.012
0.006 0.012
0.000 0.021
0.000 0.010
0.000 0.010
MILLIMETERS
MIN MAX
6.48 6.73
5.72 5.97
1.65 1.83
3.30 3.81
0.53 0.66
0.66 1.12
1.27 1.78
1.14 1.60
4.06 4.57
6.93 7.24
6.22 6.48
5.84 6.10
0.00 0.20
1.40 1.60
5.08 5.33
0.15 0.31
0.15 0.31
0.00 0.53
0.00 0.25
0.00 0.25
RF Device Data
Freescale Semiconductor
MRFG35003N6T1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRFG35003N6T1.PDF ] | |
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